IQE008N03LM5ATMA1 vs IQE008N03LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5ATMA1 by Infineon and IQE008N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveInfineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5ATMA1 | IQE008N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 27 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 253 A | β |
| On-Resistance RDS(on) Typical | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 Β΅A per LCSC snippet) | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 89 W | β |
| Package | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (typical MOSFET junction rating) | -55C to +150C (junction) |
| Gate-Source Voltage (VGS) Max | Β±20 V (typical MOSFET rating) | +/-16 V |
| Technology | OptiMOS 5, Source-Down | β |
| RoHS Status | Compliant (per LCSC listing) | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 27 A |
| Continuous Drain Current (ID) at Tc=25C | β | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 0.85 mOhm (typ) @ 20 A |
| Total Gate Charge (Qg) at VGS=10V | β | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | β | 5700 pF (typ) |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss typical] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss typical] |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 89 W |
| Lead-Free / RoHS | β | Yes (compliant per Infineon product page) |
| AEC-Q100 Automotive | β | [DATA_NEEDED: AEC-Q100 qualification status] |