IQE008N03LM5ATMA1 vs IQE008N03LM5CGATMA1 对比

详细并排对比 IQE008N03LM5ATMA1 出自 Infineon 和 IQE008N03LM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 ✓ 量产中

规格对比

参数 IQE008N03LM5ATMA1 IQE008N03LM5CGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) [DATA_NEEDED: VGS(th) typical and min/max]
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
封装 PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
安装类型 Surface Mount Surface Mount
工作温度范围 -55°C to +150°C (typical MOSFET junction rating) -55C to +150C (junction)
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) +/-16 V
Technology OptiMOS 5, Source-Down —
RoHS 状态 Compliant (per LCSC listing) —
MSL 等级 [DATA_NEEDED: MSL level] —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

数据手册与资源

浏览全部产品 创建 BOM 获取报价