IQE008N03LM5ATMA1 vs IQE008N03LM5CGATMA1 Comparaison
Comparaison détaillée côte à côte de IQE008N03LM5ATMA1 par Infineon et IQE008N03LM5CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE008N03LM5ATMA1 | IQE008N03LM5CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,94 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Boîtier | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55°C to +150°C (typical MOSFET junction rating) | -55C to +150C (junction) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | +/-16 V |
| Technology | OptiMOS 5, Source-Down | — |
| Statut RoHS | Compliant (per LCSC listing) | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25C | — | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.85 mOhm (typ) @ 20 A |
| Total Gate Charge (Qg) at VGS=10V | — | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | — | 5700 pF (typ) |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss typical] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 89 W |
| Lead-Free / RoHS | — | Yes (compliant per Infineon product page) |
| AEC-Q100 Automotive | — | [DATA_NEEDED: AEC-Q100 qualification status] |