IQE008N03LM5CGATMA1 vs IQE050N08NM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveInfineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.75 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A | β |
| Continuous Drain Current (ID) at Tc=25C | 253 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | β |
| Gate-Source Voltage (VGS) Max | +/-16 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | β |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 89 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | β |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (Ta) | β | 16 A |
| Continuous Drain Current (Tc) | β | 101 A |
| On-Resistance RDS(on) Max | β | 5.0 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 100 W |
| Technology | β | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | β | [DATA_NEEDED: Vgs(th) typical value] |
| Operating Temperature | β | -55Β°C to +175Β°C (TJ max) |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: total gate charge Qg typical] |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL rating] |