IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
MPN: IQE050N08NM5CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.91 | $2.91 |
| 10 | $2.62 | $26.20 |
| 100 | $2.33 | $233.00 |
| 500 | $2.04 | $1,020.00 |
| 1,000 | $1.75 | $1,750.00 |
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View Datasheet →IQE050N08NM5CGATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (Ta) | 16 A |
| Continuous Drain Current (Tc) | 101 A |
| On-Resistance RDS(on) Max | 5.0 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Package | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) |
| Operating Temperature | -55°C to +175°C (TJ max) |
| RoHS Status | Compliant |
IQE050N08NM5CGATMA1 Pin Configuration
| Pin 1 | G — Gate (Kelvin-source return referenced) |
| Pin 2 | D — Drain |
| Pin 3 | D — Drain |
| Pin 4 | D — Drain |
| Pin 5 | S — Source (internal tab bond) |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
| Pin 9 | S_Kelvin — Kelvin-source sense (gate-loop return) |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IQE050N08NM5CGATMA1 is suitable for 6 applications: 48V Server Point-of-Load Converters, Telecom Hot-Swap and OR-ing Controllers, Industrial Motor-Drive Half-Bridges, Battery Management Protection FETs, Synchronous Rectification in DC-DC Converters, USB-PD and High-Current Power Distribution.
48V Server Point-of-Load Converters
The IQE050N08NM5CGATMA1 fits 48V server POL converters because its 80V VDS rating provides ample margin above the nominal 48V telecom bus, and the 5.0 mΩ RDS(on) keeps conduction loss under 1W at 30A continuous current. The Source-Down PG-TTFN-9-1 package enables direct PCB thermal coupling, allowing the part to deliver 100W (Tc) without a dedicated heatsink in well-designed boards. Used as the high-side or low-side switch in a buck stage, it pairs naturally with gate drivers such as 1EDN7136UXTSA1 from the Site MPN list and minimizes switching loss through optimized Qg. Designers should connect the Kelvin-source pin (pin 9) directly to the gate-driver ground return to suppress gate-loop inductance during high-di/dt transitions.
Recommended
Telecom Hot-Swap and OR-ing Controllers
The IQE050N08NM5CGATMA1 is well suited to telecom hot-swap and OR-ing controllers where its 80V VDS handles -48V bus transients and the 5.0 mΩ RDS(on) minimizes steady-state power loss across the FET. The 16A Ta / 101A Tc continuous drain rating supports inrush-current limiting during board insertion, while the Source-Down package's Kelvin-source pin improves current-sense accuracy in OR-ing FET applications. Placed in series with the -48V return path, it provides fast disconnect during overcurrent events when driven by a hot-swap controller such as the ADM1177 or LTC4281 equivalents. The Source-Down thermal pad simplifies layout of the high-current return plane.
Recommended
Industrial Motor-Drive Half-Bridges
In industrial motor-drive half-bridges, the IQE050N08NM5CGATMA1 serves as the low-side or high-side switch for brushed-DC and small three-phase BLDC stages powered from 24V or 48V industrial buses. The 80V rating tolerates regenerative back-EMF spikes from 24V motors, and the 100W power dissipation capability supports continuous motor currents up to 30A with proper PCB cooling. Its Source-Down packaging reduces parasitic source inductance, limiting voltage overshoot during PWM switching at 20-50 kHz. The 175°C maximum junction temperature also provides headroom in sealed IPM-style enclosures where ambient temperature can exceed 85°C.
Recommended
Battery Management Protection FETs
The IQE050N08NM5CGATMA1 works as a charge/discharge protection FET in battery management systems (BMS) for e-mobility and industrial battery packs. Its 80V VDS rating comfortably covers 48V Li-ion packs (16S or 17S configurations), and the 5.0 mΩ RDS(on) preserves usable pack capacity by minimizing voltage drop during high-current discharge. The Source-Down package's exposed source pad supports the high continuous currents typical in 50-100A discharge profiles without exceeding thermal limits. Designers often parallel two such MOSFETs for high-power packs; the Kelvin-source pin ensures balanced current sharing between parallel devices.
Recommended
Synchronous Rectification in DC-DC Converters
The IQE050N08NM5CGATMA1 is an efficient synchronous rectifier in hard-switched buck converters from 12V to 48V input. Its optimized body diode (low Qrr) reduces dead-time losses, while the 5.0 mΩ RDS(on) keeps conduction loss competitive with Schottky-diode alternatives in 5-15A output stages. In a 48V-to-12V intermediate bus converter running at 100-300 kHz, the Source-Down PG-TTFN-9-1 package supports the high RMS current through the synchronous FET with minimal thermal derating. Compared to a Schottky diode, the MOSFET synchronous-rectifier approach can recover 1-3% of total efficiency in high-current converters.
Recommended
USB-PD and High-Current Power Distribution
The IQE050N08NM5CGATMA1 is suited to high-current USB-PD and 12V power-distribution switches in docking stations, automotive USB hubs, and industrial PCs. Its 5.0 mΩ RDS(on) keeps the voltage drop under 100 mV at 20A continuous load, preserving USB-PD voltage-tolerance budgets. The 80V VDS rating handles automotive load-dump transients up to 35V (with margin) when used in 12V/24V vehicle power systems. The Source-Down package enables compact PCB layouts for multi-port hubs where four or more high-current switches must share a single thermal management strategy.
Recommended
Recommended Products Summary
Engineering reference data for IQE050N08NM5CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH54NE2LM7UCGATMA1 | IQE036N08NM6CGSCATMA1 | ISC151N08NM6ATMA1 | BSC019N08NS5ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Source-Down) | PG-TTFN-9-1 (Source-Down) |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 60 V | 80 V | 100 V |
| On-Resistance RDS(on) Max | 5.0 mΩ | 5.4 mΩ | 3.6 mΩ | 1.51 mΩ | 1.9 mΩ | 6.5 mΩ |
| Continuous Drain Current (Tc) | 101 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc) | 100 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Source-Down Package | Yes | Yes | Yes | Yes | Yes | Yes |
| Kelvin-Source Pin | Yes (pin 9) | Yes (pin 9) | Yes (pin 9) | Yes (pin 9) | Yes (pin 9) | Yes (pin 9) |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Source-Down PG-TTFN-9-1 packaging with dedicated Kelvin-source pin (vs BSC019N08NS5ATMA1 (SuperSO8, no dedicated Kelvin-source))
- 5.0 mΩ RDS(on) in Source-Down package at 80V (vs ISC151N08NM6ATMA1 (60V part in same package))
- OptiMOS 5 silicon optimized for low Qrr (vs IQE065N10NM5CGSCATMA1 (100V, OptiMOS 5))
Design Notes
Estimated: At continuous 30A load with Tc=25°C baseline, the part dissipates approximately 30A² × 0.005Ω = 4.5W. The PG-TTFN-9-1 package with a 6 cm² copper area on a 1.5mm FR4 PCB yields RθJA in the 25-35°C/W range, putting junction temperature rise at 110-160°C above ambient. For continuous operation above 25A, place a thermal via array directly under the bottom source pad and consider top-side cooling with thermal interface material to a chassis or heatsink. The Source-Down architecture was specifically designed for this top-side cooling approach.
Connect pin 9 (Kelvin-source) directly to the gate-driver ground reference using a separate trace that does NOT carry the main load current. This prevents the source-tab voltage drop (from package inductance) from being fed back into the gate-drive loop, which would otherwise slow switching and cause shoot-through in half-bridge configurations. Keep the gate-loop area (gate-driver output → gate → Kelvin-source → gate-driver ground) under 0.5 cm². Place a 10Ω-100Ω gate resistor close to the gate pin to damp parasitic ringing.
Do not exceed 80V VDS, including transient overshoot from stray inductance. In half-bridge configurations, add a snubber or use adaptive dead-time control to prevent body-diode reverse-recovery-induced dv/dt failures. Avoid using the drain tab (pins 2-4, 6-8) as a Kelvin-sense point - always use pin 9 for the gate-driver return. Finally, respect the SOA curve during pulsed loads; the DC SOA shown on this page is conservative, but pulsed operation may allow brief excursions depending on thermal mass and pulse width.
Compliance Information
RoHS and lead-free status confirmed per Infineon product page. AEC-Q100 automotive qualification not explicitly stated in verified data - mark as unknown. Conflict-minerals compliance per Infineon corporate policy.
