IQE008N03LM5SCATMA1 vs IQE013N04LM6SCATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5SCATMA1 by Infineon and IQE013N04LM6SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5SCATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.02 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Technology | Trench MOSFET (N-Channel) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) | 252 A | β |
| On-Resistance (RDS(on)) max | 0.85 mΞ© at VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | β |
| Gate Drive Voltage | 10 V (recommended) | β |
| Package | PG-WHSON-8 (Source-Down) | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad |
| Configuration | Single N-Channel | β |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | [DATA_NEEDED: T_J min/max] |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | β | Β±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 1.35 mΞ© |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | β | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | β | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | β | 3800 pF |
| Packaging | β | Tape & Reel |
| Part Family | β | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN |