IQE008N03LM5SCATMA1 vs IQE013N04LM6SCATMA1 比較

詳細並排比較 IQE008N03LM5SCATMA1 由 Infineon 與 IQE013N04LM6SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 ✓ 啟用中

規格比較

參數 IQE008N03LM5SCATMA1 IQE013N04LM6SCATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Technology Trench MOSFET (N-Channel) OptiMOS (trench MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 252 A —
On-Resistance (RDS(on)) max 0.85 mΩ at VGS = 10 V —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate Drive Voltage 10 V (recommended) —
封裝 PG-WHSON-8 (Source-Down) PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad
Configuration Single N-Channel —
安裝類型 Surface Mount Surface Mount
Cooling Architecture Source-Down, dual-side cooling —
工作溫度範圍 -55 °C to +150 °C [DATA_NEEDED: T_J min/max]
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 40 V
Gate-Source Voltage (V<sub>GS</sub>) — ±20 V
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 1.35 mΩ
Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C — 31 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C — [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed)
Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C — 205 A
Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C — 2.5 W
Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C — 107 W
Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V — 41 nC
Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V — 3800 pF
Packaging — Tape & Reel
Part Family — OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN

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