IQE013N04LM6SCATMA1 vs IQE008N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6SCATMA1 by Infineon and IQE008N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β Active
Specification Comparison
| Parameter | IQE013N04LM6SCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.18 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΞ© | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 31 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | β |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | 205 A | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 2.5 W | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | 107 W | β |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | β |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | β |
| Package | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad | PG-WHSON-8 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: T_J min/max] | -55 Β°C to +150 Β°C |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Part Family | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 252 A |
| On-Resistance (RDS(on)) max | β | 0.85 mΞ© at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typical) |
| Gate Drive Voltage | β | 10 V (recommended) |
| Configuration | β | Single N-Channel |
| Cooling Architecture | β | Source-Down, dual-side cooling |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |