IQE013N04LM6SCATMA1 vs IQE008N03LM5SCATMA1 비교
다음의 상세 나란히 비교: IQE013N04LM6SCATMA1 제조: Infineon 및 IQE008N03LM5SCATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ 활성
사양 비교
| 파라미터 | IQE013N04LM6SCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.02 | $1.18 |
| FET Type | N-Channel | — |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΩ | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | 31 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | — |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | 205 A | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | 2.5 W | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | 107 W | — |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | — |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | — |
| 패키지 | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad | PG-WHSON-8 (Source-Down) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: T_J min/max] | -55 °C to +150 °C |
| RoHS 상태 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Part Family | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |