IQE013N04LM6SCATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6SCATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6SCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.82 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΞ© | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 31 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | β |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | 205 A | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 2.5 W | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | 107 W | β |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | β |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | β |
| Package | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: T_J min/max] | -55 C to +175 C (junction, Tj) |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Part Family | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| Configuration | β | Single N-channel, Source-Down |