IQE013N04LM6SCATMA1 vs IQE036N08NM6CGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE013N04LM6SCATMA1 tarafından Infineon ve IQE036N08NM6CGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | IQE013N04LM6SCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΩ | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | 31 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | — |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | 205 A | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | 2.5 W | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | 107 W | — |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | — |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | — |
| Paket | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: T_J min/max] | -55 C to +175 C (junction, Tj) |
| RoHS Durumu | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Part Family | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| MSL Seviyesi | — | MSL1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel, Source-Down |