IQE013N04LM6SCATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6SCATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6SCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET, silicon |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΞ© | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 31 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | β |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | 205 A | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 2.5 W | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | 107 W | β |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | β |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | β |
| Package | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: T_J min/max] | -55 Β°C to +175 Β°C (TJ) |
| RoHS Status | Compliant | β |
| Packaging | Tape & Reel | β |
| Part Family | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |