IQE013N04LM6SCATMA1 vs ISC011N04NM7VATMA1 比較

詳細並排比較 IQE013N04LM6SCATMA1 由 Infineon 與 ISC011N04NM7VATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ 啟用中

規格比較

參數 IQE013N04LM6SCATMA1 ISC011N04NM7VATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology OptiMOS (trench MOSFET) Trench MOSFET, silicon
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 1.35 mΩ —
Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C 31 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) —
Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C 205 A —
Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C 2.5 W —
Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C 107 W —
Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V 41 nC —
Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V 3800 pF —
封裝 PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad PG-TDSON-8 (source-down)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: T_J min/max] -55 °C to +175 °C (TJ)
RoHS 狀態 Compliant —
Packaging Tape & Reel —
Part Family OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
MSL 等級 — MSL 1 (per JEDEC J-STD-020)

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