IQE018N06NM6CGATMA1 vs IQE050N08NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active
Infineon
IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon

IQE050N08NM5CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6CGATMA1 IQE050N08NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $1.75
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 60V β€”
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D, Tc) 178 A β€”
Continuous Drain Current (I_D, Ta) 25 A β€”
R_DS(on) max (V_GS=10 V) 1.8 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 125 W 100 W
Package PG-TTFN-9-3 (TOLL/TTFN) PG-TTFN-9-1 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) β€”
Technology Trench MOSFET, OptiMOS 6 OptiMOS 5 (Source-Down)
RoHS Compliance Compliant β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (Ta) β€” 16 A
Continuous Drain Current (Tc) β€” 101 A
On-Resistance RDS(on) Max β€” 5.0 mΞ©
Gate Threshold Vgs(th) Typ β€” [DATA_NEEDED: Vgs(th) typical value]
Operating Temperature β€” -55Β°C to +175Β°C (TJ max)
Total Gate Charge Qg Typ β€” [DATA_NEEDED: total gate charge Qg typical]
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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