IQE020N04LM6CGSCATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGSCATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGSCATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| Package | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Pin Count | 9 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55 C to +175 C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | — |
| Technology | OptiMOS 6 trench | — |
| Series | — | StrongIRFET 2 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |