IQE020N04LM6CGSCATMA1 vs ISZ056N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil IQE020N04LM6CGSCATMA1 dari Infineon dan ISZ056N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ AktifInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE020N04LM6CGSCATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| Paket | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Jumlah Pin | 9 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55 C to +175 C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | — |
| Technology | OptiMOS 6 trench | — |
| Series | — | StrongIRFET 2 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |