IQE220N15NM5ATMA1 vs IPTG025N15NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IPTG025N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveInfineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7 A | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| RDS(on) Max at VGS=10V | 22 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 Β΅A) | β |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | β |
| Input Capacitance (Ciss) | 14 pF | β |
| Output Capacitance (Coss) | 340 pF | β |
| Output Configuration | Single N-Channel | β |
| Package | PG-TSON-8-5 (Source-Down) | PG-HSOG-8-1 (TOLG) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 6 150 V (N-channel trench) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25C | β | 26 A |
| Continuous Drain Current (ID) at TC=25C | β | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 395 W |
| On-State Resistance RDS(on) typ | β | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | β | -55 C to +175 C (typical for OptiMOS 6) |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | β | Excellent - 30% smaller footprint than D2PAK |