IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IQE220N15NM5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.55 | $1.55 |
| 10 | $1.39 | $13.90 |
| 100 | $1.06 | $106.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.84 | $840.00 |
IQE220N15NM5ATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier device whose drain-source conduction is gated by a positive threshold voltage on the gate. The OptiMOS 5 family represents Infineon's fifth-generation trench MOSFET platform, positioned within the broader power management IC and discrete semiconductor hierarchy as a building block for synchronous rectification, hot-swap, and high-frequency switching stages in modern power electronics.
Key features include 150 V VDS max rating, 22 mΩ on-resistance (VGS = 10 V), 14.4 nC total gate charge, 14 pF Ciss, 340 pF Coss, 4.6 V VGS(th) at 46 µA, and an integrated Source-Down package that exposes the source lead to the top pad for improved thermal dissipation. The Source-Down PG-TSON-8-5 layout flips the conventional land pattern to deliver the thermal pad directly to the PCB's heat-spreading copper pours, lowering junction-to-ambient thermal resistance compared to standard TSON-8 outlines.
Architecturally, the device uses Infineon's latest trench-cell process with a stripe-cell pitch optimized for low FOM (RDS(on) × Qg), enabling 100 kHz+ hard-switching operation in telecom and SMPS applications. The Source-Down leadframe routes the source terminal through the bottom of the die, allowing paralleled devices to share a continuous top-side copper plane as both electrical return and heatsink.
Typical applications include 48 V telecom point-of-load converters, synchronous rectification in SMPS, hot-swap controllers on 80 V-100 V distribution rails, motor drive half-bridges, eFuse/ORing switches, and industrial e-mobility auxiliary converters. Compared to a standard MOSFET, the Source-Down variant shifts the system-level thermal budget toward the PCB rather than the package, simplifying mechanical design in space-constrained modules.
When designing, place at least 100 mm² of top-side copper on the source pad, gate-drive the MOSFET from a 10 V capable driver with sub-50 ns rise/fall times, and respect the SOA at high drain voltages where thermal derating becomes critical. Validate VGS(th) at the minimum operating temperature to ensure full enhancement.
This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives, and Source-Down PCB layout guidance not found in standard MOSFET comparison tools.
Drop-in alternatives for IQE220N15NM5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE220N15NM5ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Gate Threshold Voltage (VGS(th)), Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE220N15NM5CGSCATMA1
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View Datasheet →IPTG025N15NM6ATMA1
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View Datasheet →IQE065N10NM5CGSCATMA1
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View Datasheet →IQE013N04LM6ATMA1
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View Datasheet →ISC015N06NM5LF2ATMA1
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View Datasheet →IQDH88N06LM5CGSCATMA1
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View Datasheet →IQE220N15NM5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V |
| Continuous Drain Current (ID) at Ta | 7 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 100 W |
| RDS(on) Max at VGS=10V | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | 14 pF |
| Output Capacitance (Coss) | 340 pF |
| Output Configuration | Single N-Channel |
| Package | PG-TSON-8-5 (Source-Down) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Technology | Trench MOSFET (OptiMOS 5) |
| RoHS Status | Compliant |
| MSL Level | 1 |
IQE220N15NM5ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side return path) |
| Pin 2 | Source — Source terminal (low-side return path) |
| Pin 3 | Source — Source terminal (low-side return path) |
| Pin 4 | Source — Source terminal (low-side return path) |
| Pin 5 | Drain — Drain terminal (high-voltage switched node) |
| Pin 6 | Drain — Drain terminal (high-voltage switched node) |
| Pin 7 | Drain — Drain terminal (high-voltage switched node) |
| Pin 8 | Gate — Gate control input (drive with 10 V VGS for full enhancement) |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IQE220N15NM5ATMA1 is suitable for 7 applications: 48V Telecom Point-of-Load (POL) Converters, Synchronous Rectification in SMPS, Hot-Swap and eFuse Controllers on 80-100V Rails, Motor Drive Half-Bridges and H-Bridges, Industrial e-Mobility Auxiliary Converters, Solar Micro-Inverters and Power Optimizers, Battery Management and Battery Protection.
48V Telecom Point-of-Load (POL) Converters
The IQE220N15NM5ATMA1 fits 48V telecom POL converters because its 150 V VDS provides ample margin above the nominal 48 V input plus transient spikes up to 80-100 V, and the 22 mΩ RDS(on) at VGS = 10 V minimizes conduction loss. The Source-Down PG-TSON-8-5 package enables dense placement on multi-phase POL modules by sinking heat directly into the PCB copper plane rather than the package top, keeping junction temperatures low at 10-20 A per phase. Used as a synchronous rectifier on the secondary side, the device's 14.4 nC Qg enables 200 kHz+ switching with manageable driver losses.
Recommended
Synchronous Rectification in SMPS
The IQE220N15NM5ATMA1 is well-suited for SMPS synchronous rectification on 100-120 V DC bus converters (e.g., 220 V AC PFC output stages). Its 150 V VDS handles the rectified bus plus ringing margin, while the low Qg × RDS(on) FOM (≈ 318 mΩ·nC) ensures high efficiency at 100 kHz hard-switching. The Source-Down package simplifies PCB layout by placing the thermal pad on the source side, allowing direct via-fanout to inner copper layers for improved thermal dissipation in compact server and industrial SMPS designs.
Recommended
Hot-Swap and eFuse Controllers on 80-100V Rails
The IQE220N15NM5ATMA1's 44 A continuous drain current at Tc and 150 V VDS rating cover industrial 80-100 V distribution rails, 48 V telecom battery plants, and -48 V/-60 V telecom ORing switches. As the pass-MOSFET in a hot-swap controller, the low 22 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation, while the 14.4 nC Qg enables sub-microsecond fault-current interruption when paired with a hot-swap controller IC. The Source-Down package delivers the thermal margin needed for inrush current peaks during board insertion.
Recommended
Motor Drive Half-Bridges and H-Bridges
For 48-96 V BLDC and brushed DC motor drives, the IQE220N15NM5ATMA1 serves as the low-side or high-side switch in half-bridge and H-bridge topologies. Its 150 V VDS provides headroom over 80 V bus transients, and the Source-Down PG-TSON-8-5 package allows tight side-by-side layout of high-side and low-side FETs with a shared top-side copper plane, minimizing parasitic inductance in the switching loop. The 14.4 nC Qg reduces gate-driver power budget, enabling compact integrated half-bridge driver ICs to switch at 50-100 kHz PWM.
Recommended
Industrial e-Mobility Auxiliary Converters
In 48 V mild-hybrid automotive auxiliary converters, e-bike/e-scooter traction inverters, and 96 V industrial e-mobility battery systems, the IQE220N15NM5ATMA1 handles switching on the 80-100 V DC bus. The Source-Down PG-TSON-8-5 package reduces thermal resistance versus standard TSON-8, allowing sustained high-current operation in space-constrained enclosures. Designers can parallel multiple devices on a shared PCB copper pour for higher current capability without changing the land pattern.
Recommended
Solar Micro-Inverters and Power Optimizers
The IQE220N15NM5ATMA1 fits solar micro-inverter and module-level power optimizer applications where input voltages can reach 80-100 V from series-connected PV modules. Its 150 V VDS provides safety margin over worst-case open-circuit voltage at -25°C, and the low RDS(on) × Qg FOM enables high-frequency flyback or HERIC inverter topologies. The Source-Down package's PCB-direct thermal path eliminates the need for bulky heatsinks in outdoor solar junction boxes, where ambient temperatures can exceed 70°C.
Recommended
Battery Management and Battery Protection
In 96-110 V lithium battery packs (e-mobility, energy storage), the IQE220N15NM5ATMA1 serves as a low-side disconnect FET or pre-charge MOSFET in the battery management system. Its 150 V VDS handles the fully-charged stack plus transient spikes during load dump, and the 22 mΩ RDS(on) minimizes steady-state losses. The Source-Down package's Source-Down thermal pad simplifies PCB layout in compact battery packs where copper is the primary heatsink.
Recommended
Recommended Products Summary
Engineering reference data for IQE220N15NM5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE220N15NM5CGSCATMA1 | IPTG025N15NM6ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSON-8-5 (Source-Down) | PG-TSON-8-5 (Source-Down) - same | PG-TSON-8-5 - same | PG-TSON-8-5 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 100 V |
| RDS(on) at VGS=10V | 22 mΩ | 22 mΩ | 25 mΩ | 6.5 mΩ |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
Key Differentiators
- Source-Down PG-TSON-8-5 package delivers superior PCB cooling (vs Standard TSON-8 N-channel MOSFETs)
- Lower RDS(on) than equivalent 150 V Source-Down alternatives (vs IPTG025N15NM6ATMA1 (25 mΩ))
- OptiMOS 5 generation with optimized FOM (vs Older OptiMOS 3 / 4 trench MOSFET generations)
Design Notes
Estimated: at 22 mΩ RDS(on) and 30 A continuous drain current, conduction loss is approximately 19.8 W, and total power dissipation at Tc=80°C may exceed 100 W. The Source-Down PG-TSON-8-5 package achieves a lower junction-to-PCB thermal resistance than standard TSON-8 because the source-side thermal pad connects directly to top-side copper pours. Design at least 100 mm² of top-side copper on the source pad, plus thermal vias to inner planes, to maintain junction temperature below 150°C. Without adequate copper, the part may exceed safe operating area within seconds.
The Source-Down package MIRRORS the standard TSON-8 land pattern - the source pad is on the bottom (PCB side) and the drain pads are on top of the package. Do NOT use a standard TSON-8 PCB footprint with the IQE220N15NM5ATMA1; the source and drain pads will be reversed. Refer to Infineon's Source-Down land pattern application note before PCB layout. Place the gate drive loop (gate resistor + driver) within 5 mm of the gate pin to minimize parasitic inductance that causes gate ringing.
Do not exceed VGS = ±20 V absolute maximum; use a gate-source Zener clamp (e.g., 16 V) if ringing exceeds this. Verify VGS(th) at the lowest expected operating temperature - at -40°C, VGS(th) may rise to 5.5 V, requiring a 12 V gate drive to guarantee full enhancement. The body diode reverse recovery is slow; for high-frequency bridge topologies, add an anti-parallel Schottky or synchronous channel to avoid dead-time losses. Static electricity can puncture the gate oxide - handle parts with ESD precautions.
Compliance Information
RoHS and halogen-free compliant per Infineon product page. Not AEC-Q100 qualified - the part is targeted at telecom, industrial, and consumer applications, not automotive. For automotive-grade 150 V Source-Down MOSFETs in the same family, contact Infineon for IAUZ-series or IAUC-series variants.
