IQE220N15NM5ATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7 A | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| RDS(on) Max at VGS=10V | 22 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 Β΅A) | 2 V (typ) |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | β |
| Input Capacitance (Ciss) | 14 pF | β |
| Output Capacitance (Coss) | 340 pF | β |
| Output Configuration | Single N-Channel | β |
| Package | PG-TSON-8-5 (Source-Down) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS N-channel trench MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |