IQE220N15NM5ATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7 A | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| RDS(on) Max at VGS=10V | 22 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 Β΅A) | 4.6 V |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | β |
| Input Capacitance (Ciss) | 14 pF | β |
| Output Capacitance (Coss) | 340 pF | β |
| Output Configuration | Single N-Channel | β |
| Package | PG-TSON-8-5 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5, Source-Down |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Operating Temperature Range | β | -55C to +150C (junction) |