IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
MPN: IQE220N15NM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.42 | $34.20 |
| 100 | $2.88 | $288.00 |
| 500 | $2.51 | $1,255.00 |
| 1,000 | $2.18 | $2,180.00 |
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View Datasheet →IQE220N15NM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A |
| Continuous Drain Current at Tc (ID) | 44 A |
| Power Dissipation at Ta (PD) | 2.5 W |
| Power Dissipation at Tc (PD) | 100 W |
| On-Resistance (RDS(on)) | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | 4.6 V |
| Package | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5, Source-Down |
| Operating Temperature Range | -55C to +150C (junction) |
| RoHS Status | Compliant |
IQE220N15NM5CGSCATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection (Source-Down: exposed to PCB copper) |
| Pin 3 | Source — Source connection (Source-Down: exposed to PCB copper) |
| Pin 4 | Source — Source connection (Source-Down: exposed to PCB copper) |
| Pin 5 | Source — Source connection (Source-Down: exposed to PCB copper) |
| Pin 6 | Drain — Drain connection (top thermal pad area) |
| Pin 7 | Drain — Drain connection (top thermal pad area) |
| Pin 8 | Drain — Drain connection (top thermal pad area) |
| Pin 9 | Drain — Drain connection (top thermal pad area) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IQE220N15NM5CGSCATMA1 is suitable for 7 applications: 48V Telecom SMPS Synchronous Rectification, Industrial Motor Drive H-Bridge, Server Point-of-Load (POL) Buck Converter, Solar Inverter DC-DC Stage, Automotive 48V Mild-Hybrid Systems, Telecom Battery Backup Hot-Swap Controller, Power Over Ethernet (PoE) High-Power Switch.
48V Telecom SMPS Synchronous Rectification
The IQE220N15NM5CGSCATMA1's 150 V VDS rating provides over 3x headroom above the 48 V telecom bus rail, while the 44 A continuous drain current handles the high-current demands of secondary-side synchronous rectification in isolated DC-DC converters. Placed on the low-side of a 48 V-to-12 V buck stage, its 22 milliohm RDS(on) limits conduction loss to approximately 21 W at 30 A load - acceptable in thermally-managed PCB layouts with the Source-Down pad. Compared to a Schottky diode rectifier, this MOSFET reduces rectifier losses by 60-70 percent, improving overall SMPS efficiency by 2-4 percentage points and reducing heatsink requirements in compact telecom bricks.
Recommended
Industrial Motor Drive H-Bridge
The IQE220N15NM5CGSCATMA1 suits industrial motor drive H-bridge configurations driving 24-96 V brushless DC motors. Its 150 V VDS handles inductive flyback spikes from motor windings, and the 44 A continuous drain current supports motor currents up to approximately 30 A in continuous-duty applications with proper thermal design. The Source-Down PG-WHTFN-9 package enables direct PCB copper heatsinking, eliminating external heatsinks in compact integrated motor controllers. Gate drive at 10 V fully enhances the 4.6 V threshold device, enabling fast switching transitions above 50 kHz PWM frequency for low acoustic noise operation.
Recommended
Server Point-of-Load (POL) Buck Converter
The IQE220N15NM5CGSCATMA1 serves as the high-side or low-side switch in 48 V-to-1.8 V intermediate bus converters for server power distribution. Its low RDS(on) of 22 milliohm reduces conduction loss in the high-current path, while the Source-Down package enables vertical heat extraction in densely-packed server PCBs. The part's 150 V rating provides safety margin above the 48 V nominal bus, accommodating transient spikes during load steps. At 44 A continuous current with adequate PCB copper, the part delivers efficiency above 96 percent in well-designed buck topologies, critical for meeting 80 PLUS Titanium data center efficiency standards.
Recommended
Solar Inverter DC-DC Stage
In photovoltaic solar inverter boost or buck stages operating from panel voltages up to 120 V, the IQE220N15NM5CGSCATMA1's 150 V rating provides essential headroom for open-circuit panel voltage under cold conditions (Voc can exceed 120 V on 96-cell panels). Its 44 A continuous current supports string currents up to approximately 30 A with appropriate thermal management, and the Source-Down package simplifies thermal integration into outdoor inverter housings. Compared to older generation MOSFETs, the OptiMOS 5 process delivers lower switching loss, enabling higher switching frequencies above 100 kHz for smaller magnetics.
Recommended
Automotive 48V Mild-Hybrid Systems
For 48 V mild-hybrid automotive applications, the IQE220N15NM5CGSCATMA1's Source-Down PG-WHTFN-9 package supports compact integration into 48 V belt-starter-generator and DC-DC converter modules. The 150 V rating handles 48 V bus transients up to approximately 100 V during load-dump events, while 44 A continuous current supports 2 kW+ power levels typical of mild-hybrid systems. The Source-Down construction enables PCB copper heatsinking in space-constrained under-hood environments. Note that the standard part is not AEC-Q101 qualified; for full automotive grade, an AEC-qualified variant must be selected - this is the same die and package, but with extended qualification.
Recommended
Telecom Battery Backup Hot-Swap Controller
In -48 V telecom battery backup systems, the IQE220N15NM5CGSCATMA1 functions as a hot-swap controller pass element or OR-ing FET, managing inrush current during board insertion into a live backplane. Its 150 V VDS rating handles -48 V nominal plus transient excursions, and the 22 milliohm RDS(on) keeps voltage drop below 1 V at full 44 A load. The Source-Down package enables direct PCB thermal dissipation in the hot-swap path where continuous current dissipation is common. The part's 4.6 V gate threshold ensures predictable enhancement behavior across temperature, critical for reliable hot-swap operation.
Recommended
Power Over Ethernet (PoE) High-Power Switch
The IQE220N15NM5CGSCATMA1 enables high-power PoE switches delivering 60-90 W per port for Wi-Fi 6/6E access points and IoT devices. The 150 V rating accommodates the PoE bus voltage of 50-57 V with substantial transient margin, and the 44 A continuous drain current handles multiple parallel PoE port currents when integrated into the central PSU. Its Source-Down package allows compact PCB design in 1U rack-mount switches where thermal density is critical. The OptiMOS 5 low gate charge reduces drive losses, enabling higher switching frequencies for smaller PoE magnetics and reduced BOM cost.
Recommended
Recommended Products Summary
Engineering reference data for IQE220N15NM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPTG025N15NM6ATMA1 | IQE036N08NM6CGSCATMA1 | ISC037N12NM6ATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9 | PG-WHTFN-9 - same | PG-WHTFN-9 - same | PG-WHTFN-9 - same | PG-WHTFN-9 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 80 V (-47%) | 120 V (-20%) | 120 V (-20%) |
| On-Resistance (RDS(on)) | 22 milliohm | 2.5 milliohm (-89%) | 3.6 milliohm (-84%) | 3.7 milliohm (-83%) | 1.7 milliohm (-92%) |
| Continuous Drain Current (Tc) | 44 A | Comparable | Comparable | Comparable | Comparable |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | Similar OptiMOS 5 family | Similar OptiMOS 6 family | Similar OptiMOS 6 family | Similar OptiMOS 6 family |
| Technology Generation | OptiMOS 5 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 |
| Source-Down Package | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1) | $3.95 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Source-Down package enables PCB-direct thermal dissipation (vs BSC097N06NSATMA1 (60 V OptiMOS))
- OptiMOS 5 technology generation (vs IPTG025N15NM6ATMA1 (OptiMOS 6))
- 150 V VDS rating with 22 milliohm RDS(on) balance (vs IQE036N08NM6CGSCATMA1 (80 V OptiMOS 6))
Design Notes
Estimated: at 44 A continuous current with RDS(on) of 22 milliohm, conduction loss reaches approximately 43 W at full load. The Source-Down PG-WHTFN-9 package must be soldered to a minimum of 2 square inches of PCB copper pour (1 oz copper minimum, preferably 2 oz) on the source side to maintain junction temperature below 150C. Without adequate copper area, the thermal resistance rises rapidly and the device may exceed rated junction temperature, triggering thermal shutdown or causing permanent degradation.
Place gate drive traces as short and direct as possible, with the gate resistor (typically 10-47 ohm) positioned close to the gate pin. Use a 4-layer PCB with a dedicated ground plane directly under the Source-Down thermal pad. Add multiple thermal vias (0.3 mm drill, 0.5 mm pad, 1.0 mm pitch) connecting the source pad to inner ground planes. Avoid running noisy switching signals (gate drive, drain nodes) across the source pad area to minimize parasitic coupling.
The Source-Down PG-WHTFN-9 package reverses conventional MOSFET orientation: source is on the bottom for PCB thermal connection, and drain is on the top for circuit connection. This means the drain thermal pad (top) is electrically hot and cannot be used as a heatsink surface. Thermal vias should be placed only under the source pad (bottom), not the drain pad (top), to avoid shorting drain to ground. The Source-Down construction enables superior thermal performance but requires careful layout discipline.
Avoid using logic-level 5 V gate drive - the 4.6 V gate threshold means 5 V drive may not fully enhance the device, leading to partial turn-on, high RDS(on), and excessive conduction loss. Use a dedicated 10 V gate drive supply or bootstrap circuit for high-side applications. Do not exceed the 150 V VDS rating even for transient spikes - inductive loads in motor and relay applications require snubber circuits or TVS diodes to clamp flyback voltage below 150 V.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard part is not AEC-Q101 qualified; for automotive-grade equivalents, use Infineon's AEC-qualified OptiMOS family members (e.g., IAUC100N04S6N028ATMA1).
