IRF1010ESTRLPBF vs FQP50N06 Comparison

Detailed side-by-side comparison of IRF1010ESTRLPBF by Infineon and FQP50N06 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Active

Specification Comparison

Parameter IRF1010ESTRLPBF FQP50N06
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.58
FET Type N-Channel —
Technology HEXFET planar Planar Stripe DMOS
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ Tc 84 A —
Power Dissipation (Pd) @ Tc 200 W —
On-Resistance (RDS on) @ VGS=10V 12 mOhm —
Total Gate Charge (Qg) 86.6 nC [DATA_NEEDED: Qg]
Operating Mode Enhancement —
Drive Voltage 10 V (standard level) —
Mounting Type Surface Mount Through Hole
Package D2PAK (TO-263) TO-220-3 (through-hole)
Qualification JEDEC standard qualified —
Structure Planar cell (wide SOA) —
Avalanche Testing 100% avalanche energy tested —
Sourcing Multi-vendor, broad distribution availability —
Pb-Free / RoHS PBF (Pb-free) suffix —
Manufacturer — onsemi (formerly Fairchild Semiconductor)
Part Number — FQP50N06
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at Tc — 120 W
On-Resistance Rds(on) max at VGS=10V — [DATA_NEEDED: Rds(on) max]
On-Resistance Rds(on) typical at VGS=10V — 0.022 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Operating Temperature Range — -55C to +175C (junction)
Channel Mode — Enhancement
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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