IRF1010ESTRLPBF vs FQP50N06 비교
다음의 상세 나란히 비교: IRF1010ESTRLPBF 제조: Infineon 및 FQP50N06 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF1010ESTRLPBF | FQP50N06 |
|---|---|---|
| 브랜드 | Infineon | onsemi |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.58 |
| FET Type | N-Channel | — |
| Technology | HEXFET planar | Planar Stripe DMOS |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ Tc | 84 A | — |
| Power Dissipation (Pd) @ Tc | 200 W | — |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | [DATA_NEEDED: Qg] |
| Operating Mode | Enhancement | — |
| Drive Voltage | 10 V (standard level) | — |
| 실장 유형 | Surface Mount | Through Hole |
| 패키지 | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Qualification | JEDEC standard qualified | — |
| Structure | Planar cell (wide SOA) | — |
| Avalanche Testing | 100% avalanche energy tested | — |
| Sourcing | Multi-vendor, broad distribution availability | — |
| Pb-Free / RoHS | PBF (Pb-free) suffix | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| 동작 온도 범위 | — | -55C to +175C (junction) |
| Channel Mode | — | Enhancement |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |