IRF1010NPBF-VB vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF1010NPBF-VB by VBsemi Elec and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1010NPBF-VB | IRFB4110PBF |
|---|---|---|
| Brand | VBsemi Elec | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.25 | $1.55 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| Package | TO-220AB (Through Hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | — |
| Market Qualification | Industrial | — |
| RoHS Status | Compliant (Pb-free suffix) | Compliant (Pb-free suffix) |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Technology | — | HEXFET (planar DMOS) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |