IRFB4110PBF - 100V N-Channel MOSFET, 120A, TO-220AB | Infineon
MPN: IRFB4110PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.85 | $28.50 |
| 100 | $2.4 | $240.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.78 | $1,780.00 |
| 3,000 | $1.55 | $4,650.00 |
Drop-in alternatives for IRFB4110PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB4110G
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4310PBF
✅ Drop-In✓ In Stock
$1.95 / Unit
View Datasheet →IRFP4110PBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
STP55NF06L
✅ Drop-In📋 Reference alternative (not in catalog)
IRLB8748PBF
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →BUK4537-50E
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4110PBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) |
| Gate-Source Voltage (VGS) max | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | 370 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | TO-220AB (through-hole) |
| Technology | HEXFET (planar DMOS) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) |
| Lead-Free | Yes (PBF suffix denotes Pb-free) |
IRFB4110PBF Pin Configuration
| Pin 1 | Gate — Gate control input — drive with 10 V referenced to Source |
| Pin 2 | Drain — Main current-carrying terminal; also electrically bonded to the metal tab |
| Pin 3 | Source — Source terminal — return path for gate-drive signal |
Safe Operating Area — DC (TC=25°C)
Typical Applications
IRFB4110PBF is suitable for 6 applications: High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Battery Switch, High-Speed Power Switching in Motor Drives, Solar Inverter Switching Element, Telecom DC-DC Converter High-Current Buck, Automotive Battery-Protection Disconnect Switch.
High-Efficiency Synchronous Rectification in SMPS
The IRFB4110PBF's 3.7 mΩ typical RDS(on) and 100 V rating make it a strong fit for the synchronous-rectifier low-side switch in 48 V-input telecom and server SMPS, replacing lossy Schottky diodes and recovering 2–4 % of total system efficiency. The low RDS(on) keeps conduction loss low at the high output currents typical of these rails (e.g. 30 A at 1 V out), and the 120 A continuous rating provides ample margin for load transients and inrush. Designers typically pair the IRFB4110 with a dedicated gate driver such as the IR2110 and a small RC snubber across the drain-source to damp high-frequency ringing.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IRFB4110PBF is well matched to the low-side battery-isolation switch in a 48 V UPS battery pack, where its 100 V VDS rating comfortably exceeds the 48 V nominal plus transient overshoot, and its 120 A continuous rating supports the full discharge current of typical 1–2 kVA units. The very low RDS(on) keeps voltage drop across the switch below 50 mV at full load, preserving battery runtime. The part's avalanche ruggedness also helps absorb the inductive kick during hot-swap events when batteries are paralleled.
Recommended
High-Speed Power Switching in Motor Drives
In H-bridge and three-phase motor-drive inverters up to ~5 kW, the IRFB4110PBF serves as a low-side or high-side switch leg. The 100 V rating covers 48 V battery packs used in e-bikes, light EVs, and robotics; the 120 A continuous rating handles the inrush and stall currents of 1–2 kW BLDC motors. The TO-220AB package is straightforward to bolt to a shared aluminum heatsink, and the standard gate-drive threshold works with virtually any half-bridge driver. The trade-off is switching loss above 50 kHz — for higher PWM frequencies consider the lower-Qgd IRFB4310PBF.
Recommended
Solar Inverter Switching Element
For low-voltage off-grid solar inverters (12 V/24 V/48 V battery-side), the IRFB4110PBF's low RDS(on) is a strong match for the buck-stage main switch where conduction loss dominates. At 48 V input and 30 A load, the part dissipates roughly 4 W at typical duty — within easy TO-220AB heatsink capability. Although Infineon offers newer OptiMOS 5/6 parts with much lower Qgd, the IRFB4110PBF remains a cost-effective choice for legacy and hobby designs running at 20–50 kHz PWM.
Recommended
Telecom DC-DC Converter High-Current Buck
In 48 V-input telecom DC-DC converters producing 12 V or 5 V at 30 A and above, the IRFB4110PBF can serve as the main buck switch where the 100 V rating provides margin against transients on the 48 V bus. The 3.7 mΩ typical on-resistance keeps conduction loss below 5 % at full load, supporting the >95 % efficiency targets typical of modern telecom bricks. The TO-220AB package is thermally robust when heatsinked, supporting continuous operation at high duty. Designers should keep switching frequency at 100 kHz or below to manage the part's switching loss budget.
Recommended
Automotive Battery-Protection Disconnect Switch
Although the IRFB4110PBF is not AEC-Q101 qualified, in non-safety automotive subsystems such as accessory battery disconnect or 12 V load-dump suppression, its 100 V rating absorbs 12 V system transients with substantial margin and its 120 A continuous current supports typical 50–80 A accessory loads. The TO-220AB package bolts easily to a chassis-grounded heatsink. Designers should verify that the lack of automotive qualification meets the end-customer's PPAP requirements; otherwise consider AEC-Q101 alternatives from Infineon's OptiMOS automotive portfolio.
Recommended
Recommended Products Summary
Engineering reference data for IRFB4110PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB4110G | IRFB4310PBF | IRFP4110PBF | STP55NF06L | IRLB8748PBF | BUK4537-50E |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon | NXP Semiconductors |
| Package | TO-220AB | TO-262-3 (I²PAK) — through-hole equivalent | TO-220AB — same | TO-220AB (high-dissipation) — same | TO-220AB — same | TO-220AB — same | TO-220AB — same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 60 V | 30 V | 50 V |
| Continuous Drain Current (TC=25°C) | 120 A | 120 A | 120 A | 120 A | 55 A | 78 A | [DATA_NEEDED] |
| RDS(on) max at VGS=10V | 4.5 mΩ | 4.5 mΩ | ~3.3 mΩ typ | 4.5 mΩ | 20 mΩ | 4.5 mΩ | [DATA_NEEDED] |
| RDS(on) typ at VGS=10V | 3.7 mΩ | 3.7 mΩ | 3.3 mΩ | 3.7 mΩ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25°C) | 370 W | ~370 W | 370 W | [DATA_NEEDED] | 110 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | [DATA_NEEDED] | ~50 nC typ (lower) | [DATA_NEEDED] | ~30 nC typ | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS Compliant | Yes (Pb-free) | Yes | Yes (Pb-free) | Yes (Pb-free) | Yes | Yes (Pb-free) | Yes |
Key Differentiators
- Lowest typical RDS(on) in its 100 V TO-220AB class from a tier-1 vendor (vs STP55NF06L (STMicroelectronics, 60 V part))
- Drop-in uprade path with lower switching loss (vs IRFB4310PBF (Infineon))
- Surface-mount variant for high-volume SMT lines (vs IRFB4110G (Infineon))
Design Notes
At 120 A continuous conduction the IRFB4110PBF will dissipate on the order of 53 W at room-temperature RDS(on) of 3.7 mΩ, far exceeding the safe dissipation of an unheatsinked TO-220AB (about 2 W). A low-thermal-resistance heatsink is mandatory for any continuous operation above ~30 A. Estimated: with θJC ≈ 0.4 °C/W and a 1 °C/W heatsink, the junction-to-ambient thermal resistance is roughly 1.5 °C/W, giving a temperature rise of ~80 °C at 50 A — acceptable if ambient stays below 95 °C. Use thermal interface material rated for the full operating temperature range.
Gate drive loop inductance is the primary layout hazard. The gate-source loop must be kept very short — ideally placing the gate-driver bypass capacitor within 5 mm of the FET's gate and source pins. Long gate-drive traces introduce ringing that can exceed the ±20 V VGS rating of the part and cause avalanche failure. Use a 10 Ω gate resistor and, when the gate is driven from a low-impedance driver, consider adding a small 1 nF gate-source capacitor to slow the turn-on edge and reduce dV/dt-induced turn-on of the complementary FET in half-bridge topologies.
Driving the IRFB4110PBF directly from a 5 V microcontroller GPIO is a common mistake — the part's gate threshold is typically 2–4 V and is not guaranteed to be fully enhanced at 5 V, leaving the FET in its linear region where it will dissipate massive power and quickly fail. Always use a dedicated gate driver that produces a true 10–12 V gate-source voltage. Also, never connect the tab (Drain) to a heatsink without confirming isolation requirements — for low-side switching the tab is typically grounded via the heatsink, but for high-side switching the heatsink must be isolated with a thermal pad rated for the full DC bus voltage plus transients.
For TO-220AB through-hole mounting, use plated through-holes sized for the 1.0 mm maximum lead diameter, with a minimum annular ring of 0.5 mm and at least 2 oz copper pours on drain and source connections to carry the high currents without significant voltage drop. Follow Infineon application note AN-994 for the recommended footprint and soldering profile — the TO-220AB has a relatively large thermal mass and requires a proper wave-solder or hand-solder profile (typically 260 °C peak, 10 s maximum above 217 °C) to avoid cold joints without damaging the die.
Compliance Information
Pb-free suffix 'PBF' indicates lead-free and RoHS-compliant construction per Infineon datasheet. Not AEC-Q100/AEC-Q101 qualified — for automotive applications, use the qualified variants from Infineon's automotive portfolio. REACH compliance inferred from Pb-free / halogen-free datasheet statements.
