IRF3007STRLPBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRF3007STRLPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF3007STRLPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.62 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V | β |
| Continuous Drain Current (Id) at Tc=25Β°C | 62 A | β |
| Pulsed Drain Current (Idm) | 250 A | β |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΞ© typical at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 110 nC typical | β |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25Β°C | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RΞΈJC) | 1.0 Β°C/W | β |
| Thermal Resistance Junction-to-Ambient (RΞΈJA) | 40 Β°C/W | β |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount | β |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant (Lead-Free, PBF suffix) | β |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) | Yes (improved Z-variant ruggedness) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Technology | β | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Package | β | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |