IRF3007STRLPBF vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IRF3007STRLPBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF3007STRLPBF IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.92 $1.62
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical —
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
동작 접합 온도 -55°C to +175°C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
실장 유형 Surface Mount Through Hole
RoHS 상태 Compliant (Lead-Free, PBF suffix) —
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) Yes (improved Z-variant ruggedness)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Technology — N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
패키지 — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 레벨 — N/A (through-hole)

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