IRF3007STRLPBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRF3007STRLPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3007STRLPBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $1.55
Polarity N-Channel
MOSFET Operating Mode Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V
Continuous Drain Current (Id) at Tc=25°C 62 A
Pulsed Drain Current (Idm) 250 A
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Total Gate Charge (Qg) 110 nC typical
Maximum Power Dissipation (Pd) 120 W at Tc=25°C
Operating Junction Temperature -55°C to +175°C -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
Mounting Type Surface Mount Through Hole
RoHS Status Compliant (Lead-Free, PBF suffix) Compliant (Pb-free suffix)
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax)
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ
Power Dissipation (PD) at TC=25°C 370 W
Package TO-220AB (through-hole)
Technology HEXFET (planar DMOS)
Lead-Free Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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