IRF3007STRLPBF vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of IRF3007STRLPBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveSpecification Comparison
| Parameter | IRF3007STRLPBF | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.62 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V | β |
| Continuous Drain Current (Id) at Tc=25Β°C | 62 A | β |
| Pulsed Drain Current (Idm) | 250 A | β |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΞ© typical at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 110 nC typical | 33 nC |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25Β°C | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) | 1.0 Β°C/W | β |
| Thermal Resistance Junction-to-Ambient (RΞΈJA) | 40 Β°C/W | β |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Lead-Free, PBF suffix) | Compliant |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) | β |
| FET Type | β | N-Channel |
| Technology | β | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25C | β | 10 A |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| On-Resistance (RDS(on)) max | β | 31 mOhm |
| Power Dissipation (TA=25C) | β | 3.6 W |
| Power Dissipation (TC=25C) | β | 156 W |
| Gate Drive Voltage (VGS recommended) | β | 10 V |
| Package | β | 8-PQFN (5x6) SuperSO8 |
| Configuration | β | Single with built-in body diode |
| Operating Temperature | β | -55C to +150C (TJ max) |