IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
MPN: IRFH5015TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.74 | $740.00 |
| 4,000 | $0.62 | $2,480.00 |
IRFH5015TRPBF Overview
What is a HEXFET power MOSFET? A HEXFET is Infineon's (originally International Rectifier's) brand name for a power MOSFET built on a hexagonal-cell vertical DMOS process, where each cell contains a hexagonal geometry that maximizes channel density per unit die area. HEXFET MOSFETs sit within the broader product hierarchy of: MOSFET -> power MOSFET -> discrete semiconductor -> N-channel enhancement-mode device. The IRFH5015 belongs to the medium-voltage N-channel family designed for switching power supply primary-side switches, motor drive H-bridges, and DC-DC converter high-side switches.
Key features of the IRFH5015TRPBF include industry-standard SuperSO8 5x6 packaging, JEDEC-qualified reliability, low RDS(on) of 31 mOhm at VGS=10V, and a single N-channel configuration with built-in body diode. The Power-SO8 variant is pin-compatible with the standard SO-8 footprint used by many competing N-channel MOSFETs, enabling drop-in second-source opportunities in existing layouts. The product is qualified per JEDEC standard and optimized for broadest availability from distribution partners.
Architecturally, the IRFH5015 uses a planar-cell N-channel enhancement-mode HEXFET structure. The die is rated for 3.6W continuous power dissipation at TA=25C, scaling to 156W at TC=25C. The combination of 150V breakdown, 33 nC Qg, and 31 mOhm RDS(on) places it in the sweet spot for 48V telecom bus converters, 24V industrial motor drives, and offline flyback/forward converter primary switches. The 8-PQFN 5x6 layout provides a low thermal-resistance path (theta_JC) for the higher-power TC ratings.
Typical applications include synchronous rectification in 48V-input DC-DC converters, primary-side switching in telecom brick power supplies, Class-D audio amplifier output stages, e-bike and power-tool motor control, and hot-swap controllers in 24V/48V industrial bus systems. Designers also use the IRFH5015 in half-bridge configurations with companion gate drivers such as the IR2304 or IR2110 family.
A critical design consideration is the power dissipation budget. The SuperSO8 5x6 package with exposed lead frame provides acceptable thermal performance, but the 31 mOhm RDS(on) means at 10A continuous drain current the conduction loss alone is approximately 3.1W. For high-duty-cycle synchronous-rectifier applications, careful PCB thermal via stitching and copper-pour design are essential to keep the junction within the rated operating temperature.
This page synthesizes distributor pricing, parametrically similar drop-in alternatives, and practical PCB thermal design notes that complement the manufacturer datasheet for the Infineon IRFH5015TRPBF N-channel power MOSFET.
Drop-in alternatives for IRFH5015TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFH5015TR2PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFH5015PbF
β Drop-Inπ Reference alternative (not in catalog)
FDMS86250
β Drop-Inπ Reference alternative (not in catalog)
SI7430DP-T1
β Drop-Inπ Reference alternative (not in catalog)
AON6454A
β Drop-Inπ Reference alternative (not in catalog)
VBQA1152N
β Drop-Inπ Reference alternative (not in catalog)
IRFH5015TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TA=25C | 10 A |
| Continuous Drain Current (ID) at TC=25C | 56 A |
| On-Resistance (RDS(on)) max | 31 mOhm |
| Total Gate Charge (Qg) | 33 nC |
| Power Dissipation (TA=25C) | 3.6 W |
| Power Dissipation (TC=25C) | 156 W |
| Gate Drive Voltage (VGS recommended) | 10 V |
| Package | 8-PQFN (5x6) SuperSO8 |
| Mounting Type | Surface Mount |
| Configuration | Single with built-in body diode |
| Operating Temperature | -55C to +150C (TJ max) |
| RoHS Status | Compliant |
IRFH5015TRPBF Pin Configuration
| Pin 1 | GATE β Gate drive input (10V VGS recommended) |
| Pin 2 | DRAIN β Drain connection (tied to thermal pad) |
| Pin 3 | SOURCE β Source connection |
| Pin 4 | SOURCE β Source connection (kelvin) |
| Pin 5 | SOURCE β Source connection |
| Pin 6 | SOURCE β Source connection |
| Pin 7 | SOURCE β Source connection |
| Pin 8 | DRAIN β Drain connection (tied to thermal pad) |
Safe Operating Area - DC
Typical Applications
IRFH5015TRPBF is suitable for 7 applications: 48V Telecom Brick Synchronous Rectifier, Industrial 96V BLDC Motor Drive, 120V Offline Flyback Primary Switch, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Boost Converter, Hot-Swap Controller 24V/48V Industrial Bus, E-Bike and Power Tool Motor Control.
48V Telecom Brick Synchronous Rectifier
The IRFH5015TRPBF suits 48V telecom brick synchronous rectification due to its 150V VDS rating (3x safety margin over 48V bus) and 31 mOhm RDS(on) at VGS=10V. In a typical 48V-to-12V/200W brick converter, the IRFH5015 operates as the low-side synchronous rectifier on the secondary side, switching at 200-300 kHz. Its 33 nC total gate charge keeps driver losses under 10 mW at 300 kHz, and the SuperSO8 5x6 package dissipates the 1.5-2W conduction loss without a heatsink. Compared to a 75V part, the 150V rating survives transient spikes on poorly regulated 48V battery plants.
Recommended
Industrial 96V BLDC Motor Drive
The IRFH5015TRPBF is used in 96V industrial BLDC motor drives as the high-side and low-side switch in a three-phase inverter. Its 150V VDS provides 56V of headroom over 96V DC-link voltage, surviving the L*di/dt inductive kick during PWM commutation. The 10A continuous drain current (TA) supports motors up to approximately 750W without paralleling devices. The 33 nC Qg allows direct drive from a 1A gate driver without bootstrap capacitance penalties, simplifying the gate-drive circuit and reducing BOM cost.
Recommended
120V Offline Flyback Primary Switch
In 120V AC offline flyback converters, the IRFH5015TRPBF serves as the primary-side MOSFET switching the 170V rectified DC bus. Its 150V VDS is intentionally undersized for 230V AC (340V DC) operation, making it suitable only for 120V AC universal-input designs with adequate snubber protection. The 31 mOhm RDS(on) and 33 nC Qg strike a good balance between conduction and switching losses at 65-100 kHz flyback frequencies, where the IRFH5015 typically delivers 92-94% efficiency at 30-50W output power.
Recommended
Class-D Audio Amplifier Output Stage
The IRFH5015TRPBF is deployed in the output stage of 100-200W Class-D audio amplifiers, where the 150V VDS rating supports +/-60V rail designs and the 31 mOhm RDS(on) preserves damping factor for low-distortion bass reproduction. The 33 nC Qg allows 500 kHz PWM switching with manageable gate-drive losses, and the SuperSO8 5x6 package provides enough thermal headroom for the 2-3W continuous dissipation typical in 4-ohm speaker loads. Compared to dedicated audio MOSFETs, the IRFH5015 offers broader distributor availability at lower cost.
Recommended
Solar Inverter DC-DC Boost Converter
In solar microinverter and string-inverter DC-DC boost stages, the IRFH5015TRPBF switches the 80-120V PV panel input up to 400V DC-link voltage. Its 150V VDS provides the necessary margin for panel open-circuit voltage at cold temperature (Voc rises as panel temperature drops). The 10A continuous drain current handles up to approximately 1.2 kW per phase at 100 kHz switching, and the SuperSO8 5x6 package with proper copper-pour design keeps the junction temperature within safe limits at 25C ambient.
Recommended
Hot-Swap Controller 24V/48V Industrial Bus
The IRFH5015TRPBF operates as the inrush-limiting and disconnect MOSFET in 24V/48V industrial hot-swap controllers. Its 150V VDS provides 2-3x safety margin over the 48V bus, surviving the 80V transient surges common in IEC 61000-4-5 surge testing. The 31 mOhm RDS(on) introduces only 310 mV of voltage drop at 10A load current, preserving system efficiency. The 33 nC Qg and 10V gate drive simplify the hot-swap controller design, which can directly drive the IRFH5015 with a single 1A gate driver without intermediate buffers.
Recommended
E-Bike and Power Tool Motor Control
In 36V-72V e-bike and cordless power tool motor controllers, the IRFH5015TRPBF is used in the three-phase BLDC inverter. Its 150V VDS handles 72V battery packs (16S Li-ion) with 2x safety margin, while the 31 mOhm RDS(on) keeps conduction losses low for extended battery runtime. The SuperSO8 5x6 package is well-suited to the compact controller enclosures typical of e-bike downtube-mounted controllers, and the 10V VGS drive is compatible with most automotive-qualified gate drivers operating directly from the 12V system rail.
Recommended
Recommended Products Summary
Engineering reference data for IRFH5015TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH5015TR2PBF | FDMS86250 | SI7430DP-T1 |
|---|---|---|---|---|
| Package | 8-PQFN (5x6) SuperSO8 | 8-PQFN (5x6) SuperSO8 - same | 8-PQFN (5x6) Power 56 - same | 8-PQFN (5x6) PowerPAK SO-8 - same |
| Brand | Infineon | Infineon | onsemi | Vishay |
| VDS max | 150 V | 150 V | 100 V | 150 V |
| RDS(on) max | 31 mOhm | 31 mOhm | 35 mOhm | 30 mOhm (class) |
| Continuous ID (TA=25C) | 10 A | 10 A | 14 A | 9.5 A |
| Continuous ID (TC=25C) | 56 A | 56 A | 60 A | 50 A |
| Total Gate Charge (Qg) | 33 nC | 33 nC | 28 nC | 30 nC (class) |
| Power Dissipation (TA) | 3.6 W | 3.6 W | 3.8 W | 3.4 W |
| Technology | HEXFET | HEXFET | PowerTrench | TrenchFET |
| Price @ 1k (USD) | 0.74 | 0.74 | 0.65 | 0.85 |
Key Differentiators
- Higher VDS rating than competing 100V PQFN 5x6 MOSFETs (vs FDMS86250)
- Pin-compatible drop-in with multiple Infineon variants (vs IRFH5015TR2PBF)
- Lower-cost Chinese drop-in alternative available (vs VBQA1152N)
Design Notes
At 10A continuous drain current with 31 mOhm RDS(on), the IRFH5015TRPBF dissipates approximately 3.1W of conduction loss. The SuperSO8 5x6 package with 1 sq. in. of top-side copper pour provides a theta_JA of approximately 50 C/W, giving a junction temperature rise of 155C above ambient at 10A TA - this exceeds the 150C TJ max, so continuous 10A operation at 25C ambient requires a minimum 2 sq. in. copper pour. For continuous 5-6A operation, the standard 1 sq. in. copper pad is sufficient. Use an IR camera or thermal couple to verify junction temperature in the prototype build.
Solder the exposed thermal pad of the SuperSO8 5x6 to a copper pour with at least 4 thermal vias (0.3mm diameter, 1.2mm pitch) connecting to a bottom-side copper plane. Route the gate trace with a 20-50 ohm gate-source resistor to damp the gate-oscillation common in high-di/dt switching applications. Keep the high-current drain-source loop area below 1 sq. cm to minimize parasitic inductance, which causes voltage overshoot during switching transitions and can damage the MOSFET.
Do not operate the IRFH5015TRPBF at VGS below 7V - the RDS(on) specification is only guaranteed at VGS=10V, and lower gate drive voltage will dramatically increase conduction losses. Do not exceed the 150V VDS rating even during transient spikes; use a TVS clamp or snubber for inductive loads. Finally, the body diode of the IRFH5015 has a modest reverse-recovery characteristic suitable for low-frequency applications but not for high-frequency hard-switched converters - use a separate Schottky diode for applications above 100 kHz.
Compliance Information
RoHS compliant per Infineon product page. JEDEC-qualified reliability. Not AEC-Q100 qualified - use automotive-grade IR variants for vehicle applications. Halogen-free status not explicitly stated in available web data.
