IRF4905SPBF vs IRF4905LPBF Comparison

Detailed side-by-side comparison of IRF4905SPBF by Infineon and IRF4905LPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905SPBF IRF4905LPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.98
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID, Tc=25C) -42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] β€”
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V β€”
Power Dissipation (PD, Tc=25C) 170 W β€”
Operating Junction Temperature -55 C to +150 C -55C to +150C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] β€”
Package D2PAK (TO-263) surface mount TO-262 (I2PAK), through-hole, 3-pin
Mounting Type Surface Mount Through Hole
Technology HEXFET, planar cell HEXFET (IR MOSFET)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
RoHS Status Compliant (PBF suffix indicates Pb-free) β€”
Qualification JEDEC standard β€”
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) @ Tc=25C β€” -74 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V β€” 20 mOhm
Gate Threshold Voltage Vgs(th) typ β€” [DATA_NEEDED: Vgs(th) typical]
Gate-Source Voltage (Vgs) max β€” Β±20 V
Total Power Dissipation (Ptot) @ Tc=25C β€” 200 W
Thermal Resistance Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC value]
Rise Time (tr) typ β€” [DATA_NEEDED: rise time]
Fall Time (tf) typ β€” [DATA_NEEDED: fall time]
Lead-Free / RoHS β€” Yes (PbF suffix)
Avalanche Rated β€” Yes

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