IRF4905SPBF vs IRF4905LPBF Perbandingan

Perbandingan bersamaan detil IRF4905SPBF dari Infineon dan IRF4905LPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF4905SPBF IRF4905LPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID, Tc=25C) -42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V —
Power Dissipation (PD, Tc=25C) 170 W —
Suhu Hubung Kerja -55 C to +150 C -55C to +150C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
Paket D2PAK (TO-263) surface mount TO-262 (I2PAK), through-hole, 3-pin
Tipe Mounting Surface Mount Through Hole
Technology HEXFET, planar cell HEXFET (IR MOSFET)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Status RoHS Compliant (PBF suffix indicates Pb-free) —
Qualification JEDEC standard —
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Gate-Source Voltage (Vgs) max — ±20 V
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

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