IRF9Z34NPBF vs IRF4905PBF Comparison

Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRF4905PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9Z34NPBF IRF4905PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.95
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) at Tc=25C -19 A β€”
Pulsed Drain Current (Idm) -72 A β€”
Power Dissipation (Pd) at Tc=25C 68 W β€”
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] β€”
Gate Charge (Qg) 23.3 nC (per Mouser listing) β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Operating Temperature Range -55C to +175C (junction) -55 Β°C to +175 Β°C (junction)
Package TO-220AB (through-hole, 3-pin) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source β€”
Technology HEXFET (5th generation) HEXFET (IR MOSFET)
Lead-Free / Halogen-Free Yes (PBF suffix) β€”
RoHS Status Compliant β€”
FET Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC β€” -74 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC β€” 200 W
On-Resistance RDS(on) max at VGS=-10V β€” 20 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) β€” 120 nC
Pin Configuration β€” Gate - Drain - Source (left to right)
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
MSL Level β€” 1 (not moisture-sensitive for TO-220)

Datasheets & Resources

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