IRF9Z34NPBF vs IRF4905PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9Z34NPBF disebabkan oleh Infineon dan IRF4905PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9Z34NPBF IRF4905PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A —
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] —
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Gambaran Suhu Operasi -55C to +175C (junction) -55 °C to +175 °C (junction)
Kemasan TO-220AB (through-hole, 3-pin) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) HEXFET (IR MOSFET)
Lead-Free / Halogen-Free Yes (PBF suffix) —
Status RoHS Compliant —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -74 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — 120 nC
Pin Configuration — Gate - Drain - Source (left to right)
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Aras MSL — 1 (not moisture-sensitive for TO-220)

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