IRFR2405TRLPBF vs IRFR220NTRLPBF Comparison

Detailed side-by-side comparison of IRFR2405TRLPBF by Infineon and IRFR220NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active
Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRLPBF IRFR220NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.22
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, 7th generation) β€”
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc 56 A β€”
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) β€”
On-Resistance RDS(on) max @ VGS=10V 16 mOhm β€”
Gate Charge (Qg) typical 70 nC β€”
Power Dissipation (PD) at Tc 110 W β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction) -55C to +150C (junction)
Package TO-252AA (DPAK), 3-pin (2 + Tab) TO-252AA (DPAK), 2 Leads + Tab, SC-63
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) β€”
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant β€”
Packaging Tape & Reel (TR) Tape & Reel (Left orientation - TRLPBF)
Polarity β€” N-Channel
Mode β€” Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 5 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) β€” 0.800 ohm (max)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge Qg]
Gate-to-Drain Charge (Qgd) β€” Low (per datasheet - HEXFET design)
Power Dissipation (Pd) at Tc=25C β€” 43 W
MSL Level β€” 1
RoHS Status β€” Compliant (Pb-free PBF suffix)
Avalanche Rated β€” Yes (HEXFET ruggedized design)
Technology Family β€” HEXFET, Planar, Generation 3

Datasheets & Resources

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