IRFR2405TRLPBF vs IRFR220NTRLPBF Comparaison
Comparaison détaillée côte à côte de IRFR2405TRLPBF par Infineon et IRFR220NTRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR2405TRLPBF | IRFR220NTRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,55 | $0,22 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Plage de température de fonctionnement | -55 C to +175 C (junction) | -55C to +150C (junction) |
| Boîtier | TO-252AA (DPAK), 3-pin (2 + Tab) | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Type de montage | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | — |
| Packaging | Tape & Reel (TR) | Tape & Reel (Left orientation - TRLPBF) |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 5 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | — | 43 W |
| Niveau MSL | — | 1 |
| Statut RoHS | — | Compliant (Pb-free PBF suffix) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |