IRLH5030TRPBF vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of IRLH5030TRPBF by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLH5030TRPBF
IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
IRLH5030TRPBF β ActiveInfineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveSpecification Comparison
| Parameter | IRLH5030TRPBF | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.85 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLH5030TRPBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | OptiMOS 5 (Trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TA=25C | 13 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | β |
| Total Gate Charge (Qg) | 44 nC | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Power Dissipation at TA=25C | 3.6 W | β |
| Power Dissipation at TC=25C | 156 W | β |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | β |
| Package | PQFN-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Profile Height | β€ 0.9 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | β |
| Rg Tested | 100% | β |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | β |
| Industry-Standard Pinout | Yes | β |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Continuous Drain Current (ID) at TA | β | 26 A |
| RDS(on) Max at VGS=10V | β | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | β | 9.0 nC |
| Output Charge QOSS Typ | β | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | β | 2.5 W |
| Power Dissipation at TC (Tc=25C) | β | 43 W |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Operating Temperature Range | β | -55C to +150C |
| RoHS Status | β | Compliant |