ISC009N06LM5ATMA1 vs IPT067N20NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC009N06LM5ATMA1 by Infineon and IPT067N20NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC009N06LM5ATMA1 IPT067N20NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.86 $4.85
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET Trench-gate OptiMOS 6 silicon
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm —
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Operating Temperature Range -55 C to +175 C -55C to +150C (junction)
Package PG-TSON-8-3 (SuperSO8 5x6) PG-HSOF-8-1 (8-pin + exposed tab)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL moisture sensitivity level]
RoHS Status Compliant Compliant
Product Family — OptiMOS 6
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Configuration — Single N-channel

Datasheets & Resources

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