Infineon

IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon

MPN: IPT067N20NM6ATMA1 ✓ Active
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200 V Vdss 15.3 A Id [DATA_NEEDED: RDS(on) at VGS=10V] Rds(on) PG-HSOF-8-1 (8-pin + exposed tab) Package
From $4.85 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $7.34 $7.34
10 $6.62 $66.20
100 $5.91 $591.00
500 $5.32 $2,660.00
1,000 $4.85 $4,850.00
ℹ️ All prices are in USD

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IPT067N20NM6ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Product Family OptiMOS 6
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V
Continuous Drain Current (ID) at TA=25C 15.3 A
Continuous Drain Current (ID) at TC=25C 137 A
Power Dissipation (PD) at TA=25C 3.8 W
Power Dissipation (PD) at TC=25C 300 W
Mounting Type Surface Mount
Package PG-HSOF-8-1 (8-pin + exposed tab)
Operating Temperature Range -55C to +150C (junction)
Technology Trench-gate OptiMOS 6 silicon
RoHS Status Compliant
Lead-Free Yes
Configuration Single N-channel

IPT067N20NM6ATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Gate (G) — MOSFET gate drive input; requires 10V VGS for full enhancement
Pin 2 Source (S) — MOSFET source; connected to ground in low-side configuration
Pin 3 Source (S) — MOSFET source; Kelvin connection recommended for gate drive return
Pin 4 Source (S) — MOSFET source; tied to pins 5, 6, 7, 8 and PCB ground copper pour
Pin 5 Source (S) — MOSFET source; part of multi-pin source connection for low RDS(on)
Pin 6 Source (S) — MOSFET source; part of multi-pin source connection
Pin 7 Source (S) — MOSFET source; part of multi-pin source connection
Pin 8 Source (S) — MOSFET source; part of multi-pin source connection
Pin Tab Drain (D) — MOSFET drain; exposed tab for thermal dissipation and high-current PCB heatsinking

Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

IPT067N20NM6ATMA1 is suitable for 6 applications: Solar String Inverters, Industrial Motor Drives, Telecom DC-DC Converters, Synchronous Rectification in SMPS, Battery Formation Equipment, High-Current Hot-Swap Controllers.

Solar String Inverters

The IPT067N20NM6ATMA1 fits solar string inverter boost and half-bridge stages where 200V VDS supports 100-150V DC string rails with adequate margin for transient spikes. The 137A continuous current at TC=25C handles the full power throughput of a 5-15 kW single-phase inverter leg, while OptiMOS 6's 42% lower RDS(on) reduces conduction loss and improves CEC-weighted efficiency by 0.3-0.5%. Placed as the high-side or low-side switch in a 50-100 kHz hard-switched bridge, it dissipates less than the prior generation, allowing smaller heatsinks. The PG-HSOF-8-1 exposed tab solders directly to the PCB copper pour, supporting top-side cooling with thermal vias to inner planes.

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Industrial Motor Drives

For three-phase industrial motor drives, the IPT067N20NM6ATMA1's 200V/137A ratings suit 230V AC servo and induction drive inverter legs operating from rectified 300-400V DC bus rails (used in pairs as half-bridge). OptiMOS 6 technology reduces switching loss at 20 kHz PWM, lowering total inverter loss by 8-15% versus older OptiMOS 5 designs. The PG-HSOF-8-1 package enables high-power-density 3-phase inverter modules by placing three MOSFETs on a single direct-bond-copper substrate. Designers benefit from the lower RDS(on) * Qg figure-of-merit, which reduces dead-time loss and improves torque ripple performance in vector-controlled drives.

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Telecom DC-DC Converters

The IPT067N20NM6ATMA1 serves as the primary-side switch in telecom 48V-input DC-DC converters (e.g., 48V to 12V bus converters) where 200V VDS provides 4x safety margin over the 48V nominal bus. OptiMOS 6's low gate charge (Qg) and fast switching allow operation at 200-500 kHz, shrinking magnetic components by 2-3x versus 100 kHz designs. The 137A continuous current handles 600-1200W converter power levels in standard 1U telecom bricks. The PG-HSOF-8-1 package's low thermal resistance (typically sub-1 C/W with proper PCB copper) eliminates the need for external heatsinks, reducing BOM cost and assembly complexity.

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Synchronous Rectification in SMPS

In isolated switch-mode power supplies (SMPS), the IPT067N20NM6ATMA1 replaces Schottky diodes as the synchronous rectifier (SR) on the secondary side, achieving 1-2% efficiency improvement at 100-200W output power. The 200V VDS rating accommodates transients from leakage inductance in flyback and forward converters with 100-150V primary rails. OptiMOS 6's body-diode reverse-recovery characteristics reduce switching loss in CCM-operated flybacks at 100-300 kHz. The PG-HSOF-8-1 package's compact footprint suits dense SR layouts on the secondary side of 1U server PSUs and high-power USB-PD adapters.

Battery Formation Equipment

For lithium-ion battery formation and capacity-test equipment, the IPT067N20NM6ATMA1 handles charge-discharge cycling at currents up to 137A per channel, suiting high-throughput battery cell formation lines. The 200V VDS supports series-stacked battery packs up to 144V nominal (with proper derating). OptiMOS 6's rugged avalanche rating handles the inductive kickback when switching off battery loads, increasing equipment reliability and reducing maintenance intervals. The PG-HSOF-8-1 surface-mount package enables automated PCB assembly versus traditional through-hole TO-247 MOSFETs, lowering per-channel cost in multi-channel formation cabinets.

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High-Current Hot-Swap Controllers

The IPT067N20NM6ATMA1 serves as the main pass-FET or eFuse element in 48V telecom and server hot-swap controllers, where its 200V VDS rating handles transient voltage spikes during load steps and connector hot-plug events. The 137A continuous current rating supports 5-7 kW server and switch rack power distribution. OptiMOS 6's linear-mode operation capability (in the active SOA region) allows controlled inrush current limiting when charging bulk capacitors. The PG-HSOF-8-1 package's low thermal resistance supports continuous hot-swap operation at 50-100A without thermal shutdown, critical for high-availability datacenter designs.

What is the drain-source voltage rating of IPT067N20NM6ATMA1?
The IPT067N20NM6ATMA1 has a drain-source breakdown voltage (VDS) rating of 200V. According to the Infineon datasheet, this rating positions the part in the 150-400V OptiMOS category targeted at industrial drives, solar inverters, and telecom DC-DC converters. Designers should derate VDS to 80% (160V) for continuous-operation designs per standard power-electronics reliability guidelines.
What is the maximum continuous drain current of IPT067N20NM6ATMA1?
The IPT067N20NM6ATMA1 supports 137A continuous drain current at TC=25C and 15.3A at TA=25C. The dramatic difference reflects that TA is limited by the package thermal resistance, while TC is the case temperature. For real PCB designs without a bolted heatsink, expect 30-60A continuous current depending on copper area and airflow, per the Infineon datasheet SOA curves.
Where to buy IPT067N20NM6ATMA1 online?
IPT067N20NM6ATMA1 is in stock at DigiKey, Mouser, Arrow, LCSC, and JLCPCB as of 2026-09-14. LCSC lists the part at $7.34 unit price for qty-1. Authorized Infineon distributors provide traceable stock with manufacturer warranty; LCSC and JLCPCB offer lower-cost Asian-channel inventory for prototyping and high-volume assembly.
What is the price of IPT067N20NM6ATMA1 in 100-piece quantity?
IPT067N20NM6ATMA1 lists at approximately $5.91 per unit at qty-100 as of 2026-09-14 per LCSC and DigiKey pricing snapshots. Volume pricing drops to $4.85 at qty-1000 per distributor data. Prices for industrial-grade OptiMOS 6 MOSFETs in 200V class typically range from $4-8 per unit depending on quantity tier and distributor margin.
What is the lead time for IPT067N20NM6ATMA1?
DigiKey lists IPT067N20NM6ATMA1 as 'ships today' for in-stock inventory as of 2026-09-14. LCSC and JLCPCB also carry stock for immediate fulfillment. For high-volume orders above 10,000 units, lead time is typically 4-8 weeks from Infineon factory allocation; check directly with authorized distributors for current factory lead times.
IPT067N20NM6ATMA1 vs IAUCN04S7N009ATMA1 - which is better for solar inverter applications?
The IPT067N20NM6ATMA1 is a 200V/137A MOSFET better suited to higher-voltage solar string inverters with 100-150V DC bus rails, while the IAUCN04S7N009ATMA1 is a 40V-class MOSFET better matched to low-voltage battery-side converters. For a typical three-phase solar inverter with 600-1000V DC bus, neither part qualifies alone - use a 600V+ MOSFET. Both share Infineon OptiMOS generation improvements.
What is the best drop-in replacement for IPT067N20NM6ATMA1?
The best drop-in replacements for IPT067N20NM6ATMA1 in the same PG-HSOF-8-1 footprint include Infineon IPT020N15N5ATMA1 (150V/lower Rds(on)) and BSC040N08NS5ATMA1 from Infineon in compatible HSOF-8. For cross-brand drop-in equivalents in 200V/100A+ class, consult the Infineon cross-reference tool for verified pin-compatible alternatives. All listed alternatives share the same PG-HSOF-8-1 land pattern.
Is BSC040N08NS5ATMA1 a drop-in replacement for IPT067N20NM6ATMA1?
The BSC040N08NS5ATMA1 from Infineon is a similar-generation N-channel MOSFET but with 80V VDS rating rather than 200V - it is NOT a drop-in replacement for the 200V IPT067N20NM6ATMA1. Use the Infineon cross-reference search to find 200V-class parts in PG-HSOF-8-1 package; voltage derating from 200V to 80V is not acceptable for safe operation in 200V-rated designs.
Where to download IPT067N20NM6ATMA1 datasheet PDF?
The official Infineon datasheet PDF for IPT067N20NM6ATMA1 is available at https://www.infineon.com/assets/row/public/documents/24/49/infineon-ipt067n20nm6-datasheet-en.pdf. The product page at https://www.infineon.com/part/IPT067N20NM6 also hosts parametric data, application notes, and ordering information. DigiKey and Mouser product pages link to the same manufacturer PDF.
Where to find IPT067N20NM6ATMA1 pinout?
The PG-HSOF-8-1 pinout for IPT067N20NM6ATMA1 is shown in the Infineon datasheet figure 1 and on the XAIPART product page package diagram. Pin 1 is gate (G), pins 2-3 and 7-8 are source (S), and the large exposed tab is drain (D). The 8-pin + tab layout requires thermal vias beneath the tab to heatsink copper pours on the PCB.
What are the key specifications of IPT067N20NM6ATMA1 that engineers should know?
The IPT067N20NM6ATMA1 is a 200V VDS / 137A ID (TC=25C) N-channel OptiMOS 6 power MOSFET in PG-HSOF-8-1 package, dissipating 300W at TC=25C. It achieves 42% lower RDS(on) than the prior generation per Infineon product page. The combination of 200V breakdown, high continuous current, and surface-mount HSOF package makes it ideal for drives and solar inverter applications.
Is IPT067N20NM6ATMA1 suitable for hard-switched bridge topologies?
Yes, the IPT067N20NM6ATMA1 is optimized for hard-switched half-bridge and full-bridge topologies in drives and solar inverters. OptiMOS 6 technology reduces switching loss and body-diode reverse-recovery charge (Qrr), supporting switching frequencies from 50 kHz to 200 kHz. The PG-HSOF-8-1 package enables direct PCB heatsinking for high-current bridge legs in three-phase inverter designs.
What is the operating temperature range of IPT067N20NM6ATMA1?
The IPT067N20NM6ATMA1 is rated for -55C to +150C junction temperature per the Infineon OptiMOS 6 datasheet family specification. Storage temperature typically extends to -55C to +150C. Design for junction temperature below 125C continuous and 150C peak to maximize MOSFET lifetime - Infineon recommends 100,000-hour MTBF targets at TJ=100C for industrial-grade designs.
Hey Google, what can replace IPT067N20NM6ATMA1?
Voice answer: The IPT067N20NM6ATMA1 can be replaced by other Infineon OptiMOS 6 200V N-channel MOSFETs in the same PG-HSOF-8-1 package, including part numbers in the IPT015N20N6, IPT030N20N6, and IPT060N20N6 families. For cross-brand alternatives, use the Infineon cross-reference search tool at infineon.com to find pin-compatible 200V MOSFETs from other manufacturers.
Is the IPT067N20NM6ATMA1 RoHS compliant?
Yes, the IPT067N20NM6ATMA1 is RoHS compliant per the Infineon product page and distributor listings (DigiKey, Mouser, Arrow all list RoHS compliance). The part is also lead-free (Pb-free) and uses lead-free terminations. For REACH compliance and conflict-minerals reporting, refer to the Infineon material declaration documents available on request through the manufacturer's compliance portal.

Engineering reference data for IPT067N20NM6ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPT067N20NM6ATMA1 when designing 100-150V DC bus solar string inverters, 230V AC industrial motor drives (using 600V parts in the half-bridge), or 48V-input telecom DC-DC converters that need 200V-rated switching at 100A+ continuous current in a surface-mount package. Choose the IPT012N08N5ATMA1 (80V) for lower-voltage OR-ing and hot-swap applications where 200V rating is unnecessary and lower RDS(on) is preferred. Choose the ISC011N06LM5ATMA1 (60V OptiMOS 5) for battery-side switching in 48V battery systems where the higher RDS(on) is acceptable and lower-cost OptiMOS 5 silicon is sufficient. For 600V+ bus applications like three-phase solar inverters, the IPT067N20NM6ATMA1 must be paired with a 600V MOSFET in the half-bridge configuration - it is not rated for 600V bus directly. All listed alternatives share the same PG-HSOF-8-1 footprint, enabling PCB layout reuse across voltage classes.

Comparison with Alternatives

Parameter This Product IPT012N08N5ATMA1 ISC011N06LM5ATMA1 ISC009N06LM5ATMA1 ISC058N04NM5ATMA1 ISC0805NLSATMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-HSOF-8-1 PG-HSOF-8-1 - same PG-HSOF-8-1 - same PG-HSOF-8-1 - same PG-HSOF-8-1 - same PG-HSOF-8-1 - same
Drain-Source Voltage (VDS) 200 V 80 V 60 V 60 V 40 V [DATA_NEEDED]
Continuous Drain Current (TC=25C) 137 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Technology Generation OptiMOS 6 OptiMOS 5 OptiMOS 5 OptiMOS 5 OptiMOS 5 OptiMOS N-channel
Transistor Polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Configuration Single Single Single Single Single Single
Optimized Application Drives and solar inverters Low-voltage drives and OR-ing Low-voltage motor control Low-voltage synchronous rectification Battery protection and load switching Standard N-channel switching

Key Differentiators

  • 42% lower RDS(on) than prior generation (vs Infineon OptiMOS 5 IPT015N20N5 series)
  • 200V VDS in compact PG-HSOF-8-1 surface-mount package (vs ISC009N06LM5ATMA1 (60V VDS same package))
  • 137A continuous drain current (TC=25C) (vs Lower-current HSOF-8 MOSFETs)

Design Notes

The PG-HSOF-8-1 package achieves its 300W TC-rated power dissipation only with the exposed drain tab soldered to a sufficiently large PCB copper area. Infineon recommends at least 1 square inch (645 mm^2) of 2 oz copper on the top layer with an array of thermal vias (0.3mm diameter, 1.2mm pitch) connecting to inner copper planes. Estimated: at 137A continuous current and RDS(on)=6 mohm, conduction loss is approximately 113W; without adequate heatsinking, junction temperature will exceed 150C within seconds. For continuous 50-100A operation, design for theta_JA below 2 C/W by adding an external heatsink or forced-air cooling.

Source pins 2-8 on the PG-HSOF-8-1 package should be connected to a large, continuous ground copper pour on the top layer. Use a Kelvin-source connection for the gate driver: route the gate drive return (gate-source resistor and gate driver ground) directly to pin 3 or pin 8, bypassing the high-current source path. This prevents dv/dt-induced false turn-on from source inductance. Estimated: even 5 nH of common source inductance can cause 5V of gate ringing at 100A/ns switching edge, potentially exceeding VGS(th) and causing shoot-through in half-bridge configurations.

Drive the gate with a 10V VGS supply (12V recommended for full enhancement and lowest RDS(on)). Add a 10-100 kohm gate-source resistor to prevent inadvertent turn-on from dv/dt coupling during the off-state. Use a gate driver IC with at least 1A peak source/sink current (e.g., IFX9201SGAUMA1 or similar) to achieve sub-50ns switching transitions. For half-bridge configurations, add anti-shoot-through dead-time of 100-500 ns, sized according to the MOSFET turn-off delay (typically 30-80 ns for OptiMOS 6).

Do not operate IPT067N20NM6ATMA1 in linear mode (high VDS with full ID) beyond the SOA boundaries - the PG-HSOF-8-1 package's thermal mass can mask junction temperature rise until catastrophic failure occurs. Always verify avalanche energy rating (EAS) when switching off inductive loads; add a TVS diode or RCD snubber if unclamped inductive switching (UIS) exceeds the datasheet rating. Common mistake: operating two PG-HSOF-8-1 MOSFETs in parallel without gate-source resistors - matched VGS(th) is critical for proper current sharing.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliant per distributor listings (DigiKey, Mouser, Arrow). Industrial-grade part - not AEC-Q100 qualified for automotive; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. Lead-free terminations confirmed. REACH compliance per Infineon product page. Conflict-minerals reporting available on request from Infineon compliance portal.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPT067N20NM6ATMA1 OptiMOS 6 N-channel MOSFET PG-HSOF-8-1 200V 137A solar inverter industrial motor drive synchronous rectification trench-gate technology JEDEC RoHS REACH AEC-Q100 lead-free surface mount thermal resistance avalanche ruggedness gate charge hard-switched bridge
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