ISC009N06LM5ATMA1 vs IPT067N20NM6ATMA1 比較
詳細な並列比較: ISC009N06LM5ATMA1 メーカー: Infineon および IPT067N20NM6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC009N06LM5ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.86 | $4.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | Trench-gate OptiMOS 6 silicon |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| 動作温度範囲 | -55 C to +175 C | -55C to +150C (junction) |
| パッケージ | PG-TSON-8-3 (SuperSO8 5x6) | PG-HSOF-8-1 (8-pin + exposed tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS ステータス | Compliant | Compliant |
| Product Family | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| Configuration | — | Single N-channel |