ISC009N06NM6ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC009N06NM6ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC009N06NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta=25C | 40 A | β |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | β |
| Power Dissition (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 221 W | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | β |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |