ISC011N04NM7VATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active
Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N04NM7VATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $1.21
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 Power-Transistor β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TA=25Β°C 38 A β€”
Continuous Drain Current (ID) at TC 256 A β€”
On-Resistance RDS(on) max @ VGS=10V 1.1 mΞ© 1.9 mOhm
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 136 W β€”
Gate Threshold Voltage (Vth) Up to 3.2 V β€”
Technology Trench MOSFET, silicon OptiMOS 5 (N-channel trench MOSFET)
Package PG-TDSON-8 (source-down) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55 C to +150 C
RoHS Compliance Compliant (per Infineon product page) β€”
MSL Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
RoHS Status β€” Compliant
Lead-Free / Halogen-Free β€” Yes / Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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