ISC015N03LF2SATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N03LF2SATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N03LF2SATMA1
ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon
ISC015N03LF2SATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ 2 (<= 40 V trench) | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 43 A | β |
| Continuous Drain Current (ID) at TC=25C | 214 A | β |
| On-Resistance RDS(on) max at VGS=10V | 1.5 mΞ© | β |
| Gate Threshold Voltage VGS(th) | 2.35 V | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 125 W | β |
| Package | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction, typical) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel |
| Technology | β | StrongIRFET 2 (Trench MOSFET) |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |