ISC040N10NM7ATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC040N10NM7ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC040N10NM7ATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.78
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID) at Ta=25Β°C 18 A β€”
Continuous Drain Current (ID) at Tc=25Β°C 130 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at Ta=25Β°C 3 W β€”
Power Dissipation (PD) at Tc=25Β°C 150 W β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] β€”
RDS(on) @ VGS=10V [DATA_NEEDED: RDS(on) max in mohm] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] β€”
Package PG-TDSON-8-34 (SSO8) PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +175Β°C (TJ max) β€”
RoHS Status Compliant Compliant
MSL Level MSL1 (per JEDEC J-STD-020) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (TA=25Β°C) β€” 9.2 A
Continuous Drain Current (TC=25Β°C) β€” 37 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 48 W
On-Resistance RDS(on) max β€” 15.1 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Technology β€” OptiMOS 6
Number of Pins β€” 8
Channel Mode β€” Enhancement
Operating Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

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