ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
MPN: ISC151N08NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
| 3,000 | $0.78 | $2,340.00 |
Drop-in alternatives for ISC151N08NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC037N12NM6ATMA1
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View Datasheet →ISZ230N10NM6ATMA1
✅ Drop-In✓ In Stock
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View Datasheet →ISC015N06NM5LF2ATMA1
✅ Drop-In✓ In Stock
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View Datasheet →ISC151N08NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A |
| Continuous Drain Current (TC=25°C) | 37 A |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 48 W |
| On-Resistance RDS(on) max | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Technology | OptiMOS 6 |
| Package | PG-TDSON-8 FL |
| Mounting Type | Surface Mount |
| Number of Pins | 8 |
| Channel Mode | Enhancement |
| Operating Temperature | -55 °C to +175 °C |
| RoHS Status | Compliant |
ISC151N08NM6ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | DRAIN — Drain terminal (connected to exposed pad) |
| Pin 3 | DRAIN — Drain terminal (connected to exposed pad) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | SOURCE — Source terminal |
| Pin 6 | SOURCE — Source terminal |
| Pin 7 | DRAIN — Drain terminal (connected to exposed pad) |
| Pin 8 | DRAIN — Drain terminal (connected to exposed pad) |
ISC151N08NM6 Safe Operating Area (DC)
Typical Applications
ISC151N08NM6ATMA1 is suitable for 6 applications: 48 V Telecom Isolated DC-DC Converter, Battery Management System (BMS) Protection FET, Synchronous Rectifier in Server PSU, Hot-Swap / eFuse Controller Switch, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter / Power Optimizer.
48 V Telecom Isolated DC-DC Converter
The ISC151N08NM6ATMA1 fits primary-side switching in 48 V telecom isolated DC-DC converters because its 80 V VDS rating provides >66% headroom above the 48 V nominal bus, comfortably absorbing transients from cable inductance and load steps. With 15.1 mΩ RDS(on) and 37 A continuous drain current at TC, it handles full-load currents typical of 600-1200 W brick converters without exceeding thermal limits when properly heat-sunk. Placed on the primary-side high-voltage rail of a half-bridge or full-bridge topology, the device's OptiMOS 6 low Qg and Qoss reduce switching loss enough to support 100-200 kHz switching, shrinking the isolation transformer footprint. Compared with older 80 V MOSFETs, the >24% lower RDS(on) cuts conduction loss across the load range, directly improving converter efficiency at 50% load where telecom operators typically measure.
Recommended
Battery Management System (BMS) Protection FET
The ISC151N08NM6ATMA1 serves as a low-side protection FET in 48 V Li-ion battery management systems where its 80 V VDS rating handles pack voltages up to 56 V with margin, and its 37 A continuous current supports 1.5-2 kW discharge paths without active cooling. The 15.1 mΩ RDS(on) dissipates under 1 W at 8 A continuous load, allowing operation without heatsink in sealed battery enclosures. Infineon's OptiMOS 6 cell technology provides avalanche-rated SOA critical for short-circuit events, while the PG-TDSON-8 FL package's exposed pad simplifies thermal coupling to the inner copper layer of the BMS PCB. Designers should add a TVS diode across drain-source for inductive kick protection during disconnect events.
Recommended
Synchronous Rectifier in Server PSU
The ISC151N08NM6ATMA1 is used as the synchronous rectifier FET on the secondary side of 48 V-to-12 V server power supply units, replacing Schottky diodes to gain a >1.5% efficiency boost across the load curve. Its 80 V VDS rating exceeds typical 12 V rails by 6x margin, ensuring robustness during transient ringing and load-dump events on the secondary side. The 15.1 mΩ RDS(on) at VGS=10 V keeps conduction loss under 0.5 W at 6 A output, while OptiMOS 6's body-diode reverse recovery characteristics minimize dead-time loss in CCM operation. Layout tip: minimize the source-loop inductance between this FET and the primary-side control IC gate driver to prevent gate overshoot.
Recommended
Hot-Swap / eFuse Controller Switch
The ISC151N08NM6ATMA1 acts as the main pass element in 48 V hot-swap and eFuse circuits where its 80 V VDS handles inrush transients and backplane faults. The 37 A continuous current rating supports 1.5-2 kW board-level power feeds common in telecom and server backplanes, while the 15.1 mΩ RDS(on) keeps steady-state dissipation manageable. Infineon's OptiMOS 6 SOA in linear mode allows the FET to dissipate fault energy for several milliseconds during current-limit foldback, simplifying eFuse controller design. Add a current-sense resistor and TVS clamp across drain-source for full hot-swap protection.
Recommended
Industrial Motor Drive Half-Bridge
The ISC151N08NM6ATMA1 is deployed in the low-side or high-side position of 48 V industrial motor drive half-bridges for AGVs, robotics, and small servo drives. With 37 A continuous current and 80 V VDS rating, it handles 1-2 kW motor power with margin, while the 15.1 mΩ RDS(on) limits conduction loss during PWM operation at 20-50 kHz switching frequencies. The PG-TDSON-8 FL package's low thermal resistance enables direct PCB cooling without external heatsink in compact industrial designs. Designers should include a gate-source resistor (10-100 kΩ) to prevent unintended turn-on from Miller current during the opposite FET's switching edge.
Recommended
Solar Micro-Inverter / Power Optimizer
The ISC151N08NM6ATMA1 fits as the switching element in 60-80 V solar micro-inverter and DC power optimizer stages where its 80 V VDS rating handles open-circuit PV panel voltages up to ~50 V with adequate derating margin. The 15.1 mΩ RDS(on) and OptiMOS 6 trench cell technology deliver >98% peak efficiency in synchronous buck-boost topologies, while the PG-TDSON-8 FL package's exposed pad enables efficient bottom-side cooling in IP67 outdoor enclosures. For higher-power strings, parallel multiple ISC151N08NM6ATMA1 devices with matched gate-drive timing to share current without thermal runaway.
Recommended
Recommended Products Summary
Engineering reference data for ISC151N08NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC037N12NM6ATMA1 | ISZ230N10NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 80 V | 120 V | 100 V | 60 V |
| Continuous Drain Current (TC=25°C) | 37 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max | 15.1 mΩ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Power Dissipation (TC) | 48 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- OptiMOS 6 platform with >24% lower RDS(on) than prior generation (vs ISC037N12NM6ATMA1)
- Wide VDS margin at 80 V for 48 V telecom buses (vs ISC015N06NM5LF2ATMA1)
- PG-TDSON-8 FL package with exposed thermal pad (vs BSC019N08NS5ATMA1)
Design Notes
Estimated: at continuous TC=25 °C with 48 W power dissipation and Infineon's published PG-TDSON-8 FL thermal resistance of ~50 °C/W junction-to-case, the junction temperature reaches the 175 °C maximum with only ~25 °C margin. Designers must de-rate to TC=85 °C or lower for reliability (industry rule: keep Tj ≤ 125 °C at full load). Mount the exposed pad onto a copper area of at least 100 mm² with thermal vias to the inner layer for proper heat extraction. The 3 W ambient rating implies the device dissipates only ~3 W before reaching Tj=150 °C in still air without a heatsink - always check thermal in actual PCB geometry.
Minimize the source-loop inductance between the ISC151N08NM6ATMA1 source pins and the gate-driver ground return to prevent gate overshoot and ringing during switching transients. Use a 4.7 Ω to 10 Ω gate resistor to damp parasitic oscillation without slowing the switching edge excessively. Keep the drain-source snubber loop area under 10 mm² to limit VDS overshoot below 100 V (20% above the 80 V rating) during hard turn-off events.
Do not operate the ISC151N08NM6ATMA1 with VGS below 8 V - the RDS(on) specification of 15.1 mΩ assumes VGS=10 V. At VGS=4.5 V the device may still turn on but RDS(on) increases 2-3x, causing thermal runaway in high-current designs. Add a 10-100 kΩ gate-source resistor to prevent unintended turn-on from Miller current during the complementary FET's switching edge in half-bridge topologies. Finally, verify that the exposed pad is properly soldered - a dry joint can increase thermal resistance by 30-50%.
Compliance Information
RoHS compliant per Infineon product page and DigiKey listing. Standard grade - not AEC-Q100 qualified; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. REACH compliance per EU declaration.
