ISC040N10NM7ATMA1 vs ISC151N08NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC040N10NM7ATMA1 sa pamamagitan ng Infineon at ISC151N08NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC040N10NM7ATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID) at Ta=25°C 18 A —
Continuous Drain Current (ID) at Tc=25°C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta=25°C 3 W —
Power Dissipation (PD) at Tc=25°C 150 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
RDS(on) @ VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Packhaging PG-TDSON-8-34 (SSO8) PG-TDSON-8 FL
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ max) —
Tindminan RoHS Compliant Compliant
Level ng MSL MSL1 (per JEDEC J-STD-020) —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (TA=25°C) — 9.2 A
Patuloy na Drain Current (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Bilang ng Pins — 8
Channel Mode — Enhancement
Temperature na Operasyon — -55 °C to +175 °C

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