ISC045N03L5SATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter ISC045N03L5SATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $1.21
Manufacturer Infineon Technologies β€”
Part Number ISC045N03L5SATMA1 β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 / Trench OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TC=25Β°C 63 A β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mΞ© 1.9 mOhm
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 Β΅A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) 13 nC @ VGS=10 V β€”
Input Capacitance (Ciss) 870 pF @ VDS=15 V β€”
Power Dissipation (PD) at TA=25Β°C 2.5 W β€”
Power Dissipation (PD) at TC=25Β°C 30 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-6) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C -55 C to +150 C
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
MSL Level β€” 1 (unlimited)
Lead-Free / Halogen-Free β€” Yes / Yes
Avalanche Rated β€” Yes

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