ISC045N03L5SATMA1 vs IRFH5015TRPBF Comparison
Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC045N03L5SATMA1 | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC045N03L5SATMA1 | — |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | 33 nC |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | 8-PQFN (5x6) SuperSO8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C | — |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Operating Temperature | — | -55C to +150C (TJ max) |