ISC046N13NM6ATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC046N13NM6ATMA1
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
ISC046N13NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC046N13NM6ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.08 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V | 60 V |
| Continuous Drain Current (ID) at TA | 17 A | β |
| Continuous Drain Current (ID) at TC | 142 A | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 211 W | β |
| Package / Case | PG-TDSON-8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 60V N-channel trench MOSFET |
| Gate Drive (recommended) | 10 V (typical) | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Series | β | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | β | 41 A |
| Continuous Drain Current (ID) at Tc | β | 348 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 0.9 mOhm |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |
| Package | β | PG-TSON-8-3 (SuperSO8 5x6) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |