ISC056N08NM6ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC056N08NM6ATMA1
ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon
ISC056N08NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC056N08NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC056N08NM6ATMA1 | β |
| Series | OptiMOS 6 | β |
| Technology | N-Channel Trench MOSFET (OptiMOS 6) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 88 A | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 100 W | β |
| Package | PG-TDSON-8 FL (TDSON-8 Flat Lead) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +175 C |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |